Intel corporation (20240222347). MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES simplified abstract

MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES

Organization Name

intel corporation

Inventor(s)

Sagar Suthram of Portland OR (US)

Kuljit S. Bains of Olympia WA (US)

Wilfred Gomes of Portland OR (US)

Don Douglas Josephson of Fort Collins CO (US)

Surhud V. Khare of Buffalo NY (US)

Christopher Philip Mozak of Portland OR (US)

Randy B. Osborne of Beaverton OR (US)

Pushkar Ranade of San Jose CA (US)

Abhishek Anil Sharma of Portland OR (US)

MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222347 titled 'MODULAR MEMORY BLOCKS FOR INTEGRATED CIRCUIT DEVICES

The abstract describes an integrated circuit device that includes a logic die with processor circuitry and a memory die coupled to the logic die. The memory die consists of a first memory module with a first memory bank and control circuitry, a second memory module with a second memory bank and control circuitry, and a scribe line separating the two modules. Each memory module includes through silicon vias (TSVs) to enable electrical connection between the top and bottom sides for three-dimensional stacking within the integrated circuit device.

• Memory die with two separate memory modules
• First memory module with first memory bank and control circuitry
• Second memory module with second memory bank and control circuitry
• Scribe line separating the two memory modules
• Through silicon vias (TSVs) for electrical connection within each memory module
• Three-dimensional stacking capability within the integrated circuit device

Potential Applications: - High-performance computing - Data centers - Artificial intelligence systems - Internet of Things devices

Problems Solved: - Increased memory capacity within a compact space - Enhanced data processing speed - Improved overall performance of integrated circuit devices

Benefits: - Higher efficiency in data storage and retrieval - Faster processing speeds - Compact design for space-saving solutions

Commercial Applications: Title: "Advanced Memory Integration for High-Performance Computing Systems" This technology can be utilized in high-performance computing systems, data centers, and AI applications to enhance memory capacity and processing speeds, leading to improved overall performance and efficiency in various industries.

Questions about the technology: 1. How does the integration of multiple memory modules improve the performance of the integrated circuit device? 2. What are the advantages of using through silicon vias (TSVs) for electrical connection within the memory modules?

Original Abstract Submitted

in embodiments herein, an integrated circuit device includes a logic die with processor circuitry and a memory die coupled to the logic die. the memory die includes a first memory module comprising a first memory bank and first control circuitry, a second memory module comprising a second memory bank and second control circuitry, and a scribe line on a surface of the memory die between the first memory module and the second memory module. the first memory module is not electrically connected to the second memory module, and each memory module include through silicon vias (tsvs) to electrically connect a top side of the memory module and a bottom side of the memory module (e.g., for three-dimensional stacking in the integrated circuit device).