Intel corporation (20240222283). METHODS AND APPARATUS TO PREVENT OVER-ETCH IN SEMICONDUCTOR PACKAGES simplified abstract

METHODS AND APPARATUS TO PREVENT OVER-ETCH IN SEMICONDUCTOR PACKAGES

Organization Name

intel corporation

Inventor(s)

Hongxia Feng of Chandler AZ (US)

Bohan Shan of Chandler AZ (US)

Bai Nie of Chandler AZ (US)

Xiaoxuan Sun of Phoenix AZ (US)

Holly Sawyer of Aloha OR (US)

Tarek Ibrahim of Mesa AZ (US)

Adwait Telang of Portland OR (US)

Dingying Xu of Chandler AZ (US)

Leonel Arana of Phoenix AZ (US)

Xiaoying Guo of Chandler AZ (US)

Ashay Dani of Chandler AZ (US)

Sairam Agraharam of Chandler AZ (US)

Haobo Chen of Chandler AZ (US)

Srinivas Pietambaram of Chandler AZ (US)

Gang Duan of Chandler AZ (US)

METHODS AND APPARATUS TO PREVENT OVER-ETCH IN SEMICONDUCTOR PACKAGES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222283 titled 'METHODS AND APPARATUS TO PREVENT OVER-ETCH IN SEMICONDUCTOR PACKAGES

The abstract of this patent application describes methods and apparatus to prevent over-etch in semiconductor packages. The example semiconductor package includes a dielectric layer, an interconnect extending through or from the dielectric layer, and a material containing silicon or titanium on at least a portion of the interconnect.

• The semiconductor package includes at least one dielectric layer.
• An interconnect extends through or from the dielectric layer.
• A material containing silicon or titanium is present on at least a portion of the interconnect.

Potential Applications: - Semiconductor manufacturing - Electronics industry

Problems Solved: - Preventing over-etch in semiconductor packages - Ensuring proper functionality of semiconductor devices

Benefits: - Improved reliability of semiconductor packages - Enhanced performance of electronic devices

Commercial Applications: - Semiconductor fabrication companies - Electronics manufacturers

Questions about the technology: 1. How does the presence of silicon or titanium in the material help prevent over-etch in semiconductor packages? 2. What are the specific challenges faced in preventing over-etch in semiconductor packages, and how does this innovation address them?

Original Abstract Submitted

methods and apparatus to prevent over-etch in semiconductor packages are disclosed. a disclosed example semiconductor package includes at least one dielectric layer, an interconnect extending at least partially through or from the at least one dielectric layer, and a material on at least a portion of the interconnect, wherein the material comprises at least one of silicon or titanium.