Intel corporation (20240222274). HYBRID INTEGRATION OF BACK-END-OF-LINE LAYERS FOR DISAGGREGATED TECHNOLOGIES simplified abstract
Contents
HYBRID INTEGRATION OF BACK-END-OF-LINE LAYERS FOR DISAGGREGATED TECHNOLOGIES
Organization Name
Inventor(s)
Praneeth Kumar Akkinepally of Tempe AZ (US)
Sivakumar Nagarajan of Chandler AZ (US)
Nisha Ananthakrishnan of Chandler AZ (US)
Santosh Shaw of Chandler AZ (US)
HYBRID INTEGRATION OF BACK-END-OF-LINE LAYERS FOR DISAGGREGATED TECHNOLOGIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222274 titled 'HYBRID INTEGRATION OF BACK-END-OF-LINE LAYERS FOR DISAGGREGATED TECHNOLOGIES
Simplified Explanation: This patent application discloses integrated circuit (IC) dies, microelectronic assemblies, and related devices and methods. The IC die includes multiple layers of interconnects and transistors, with different electrically conductive fill materials used in each layer.
- The IC die includes a substrate, a front-end-of-line (FEOL) layer with transistors, and three back-end-of-line (BEOL) layers with interconnects.
- The first BEOL layer is between the FEOL layer and the second BEOL layer, while the second BEOL layer is between the first and third BEOL layers.
- Different electrically conductive fill materials are used in the interconnects of each BEOL layer.
Key Features and Innovation:
- Multiple layers of interconnects and transistors in the IC die.
- Different electrically conductive fill materials used in each BEOL layer.
- Specific arrangement of FEOL and BEOL layers for efficient circuit design.
Potential Applications: This technology can be used in various electronic devices such as smartphones, computers, and IoT devices.
Problems Solved:
- Efficient integration of multiple layers of interconnects and transistors.
- Optimization of electrically conductive fill materials for improved performance.
Benefits:
- Enhanced circuit performance and reliability.
- Increased efficiency in electronic device design.
Commercial Applications: Potential commercial applications include semiconductor manufacturing, electronics production, and telecommunications industries.
Questions about Integrated Circuit Technology: 1. How does the use of different electrically conductive fill materials in each BEOL layer impact the overall performance of the IC die? 2. What are the specific advantages of the arrangement of FEOL and BEOL layers in this technology?
Ensure the article is comprehensive, informative, and optimized for SEO with appropriate keyword usage and interlinking. Use varied sentence structures and natural language to avoid AI detection. Make the content engaging and evergreen by focusing on the lasting impact and relevance of the technology.
Original Abstract Submitted
integrated circuit (ic) dies, microelectronic assemblies, and related devices and methods, are disclosed herein. for example, in some embodiments, an ic die may include a substrate, a front-end-of-line (feol) layer over the substrate, where the feol layer includes a plurality of transistors, a first back-end-of-line (beol) layer comprising first interconnects, a second beol layer comprising second interconnects, and a third beol layer comprising third interconnects, wherein the first beol layer is between the feol layer and the second beol layer, the second beol layer is between the first beol layer and the third beol layer, and an electrically conductive fill material of the second interconnects is different from an electrically conductive fill material of the first interconnects and from an electrically conductive fill material of the third interconnects.
