Intel corporation (20240222228). DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER simplified abstract

DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER

Organization Name

intel corporation

Inventor(s)

Abhishek Anil Sharma of Portland OR (US)

Han Wui Then of Portland OR (US)

Wilfred Gomes of Portland OR (US)

Anand S. Murthy of Portland OR (US)

Tahir Ghani of Portland OR (US)

Sagar Suthram of Portland OR (US)

Pushkar Ranade of San Jose CA (US)

DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222228 titled 'DEVICES IN A SILICON CARBIDE LAYER COUPLED WITH DEVICES IN A GALLIUM NITRIDE LAYER

Simplified Explanation: This patent application relates to semiconductor packages that utilize devices in an SiC layer and devices in a GaN layer to convert a high voltage source to a lower voltage used by components within the package.

Key Features and Innovation:

• Use of SiC and GaN layers for voltage conversion in semiconductor packages
• Transistors used for voltage conversion
• Ability to supply increased power to the package

Potential Applications: This technology can be applied in various high-power electronic devices, such as power supplies, inverters, and electric vehicles.

Problems Solved: This technology addresses the need for efficient voltage conversion in high-power semiconductor packages.

Benefits:

• Increased power supply capability
• Efficient voltage conversion
• Enhanced performance of electronic devices

Commercial Applications: The technology can be utilized in the development of high-power electronic devices for industries such as automotive, renewable energy, and telecommunications.

Questions about Semiconductor Packages: 1. How does the use of SiC and GaN layers improve voltage conversion in semiconductor packages? 2. What are the potential advantages of using transistors for voltage conversion in these packages?

Original Abstract Submitted

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for semiconductor packages that use devices within an sic layer coupled with devices within a gan layer proximate to the sic to convert a high voltage source to the package, e.g. greater than 1 kv, to 1-1.8 v used by components within the package. the devices may be transistors. the voltage conversion will allow increased power to be supplied to the package. other embodiments may be described and/or claimed.