Intel corporation (20240222018). SUBSTRATE PACKAGE-INTEGRATED OXIDE CAPACITORS AND RELATED METHODS simplified abstract
Contents
SUBSTRATE PACKAGE-INTEGRATED OXIDE CAPACITORS AND RELATED METHODS
Organization Name
Inventor(s)
Thomas Sounart of Chandler AZ (US)
Henning Braunisch of Phoenix AZ (US)
Aleksandar Aleksov of Chandler AZ (US)
Kristof Darmawikarta of Chandler AZ (US)
Numair Ahmed of Chandler AZ (US)
Darko Grujicic of Chandler AZ (US)
Suddhasattwa Nad of Chandler AZ (US)
Benjamin Duong of Phoenix AZ (US)
Marcel Wall of Phoenix AZ (US)
Shayan Kaviani of Phoenix AZ (US)
SUBSTRATE PACKAGE-INTEGRATED OXIDE CAPACITORS AND RELATED METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222018 titled 'SUBSTRATE PACKAGE-INTEGRATED OXIDE CAPACITORS AND RELATED METHODS
Simplified Explanation: The patent application describes substrate package-integrated oxide capacitors, where a thin film capacitor is formed on a first layer with a second layer defining openings for electrodes, a third layer with oxidized material acting as the dielectric, and a fourth layer between the first and second layers.
Key Features and Innovation:
- Substrate package-integrated oxide capacitors
- Thin film capacitor structure with multiple layers
- Oxidized material in the dielectric layer
- Electrodes defined by openings in the second layer
Potential Applications: The technology could be used in electronic devices, power supplies, and integrated circuits where compact and efficient capacitors are required.
Problems Solved: The technology addresses the need for high-performance capacitors in small form factors, providing a solution for space-constrained electronic applications.
Benefits:
- Compact size
- High performance
- Efficient energy storage
- Suitable for integrated circuits
Commercial Applications: The technology could be valuable in the consumer electronics industry, telecommunications sector, and automotive electronics market for various applications requiring compact and efficient capacitors.
Questions about Substrate Package-Integrated Oxide Capacitors: 1. How do substrate package-integrated oxide capacitors differ from traditional capacitors? 2. What are the advantages of using oxidized material in the dielectric layer of capacitors?
Frequently Updated Research: Ongoing research in the field of thin film capacitors and integrated circuit technology may lead to further advancements in substrate package-integrated oxide capacitors.
Original Abstract Submitted
substrate package-integrated oxide capacitors and related methods are disclosed herein. an example apparatus including a first layer and a thin film capacitor including a second layer on the first layer, the second layer defining a plurality of openings and a third layer disposed on the first layer and in the plurality of openings, the second layer and the third layer corresponding to electrodes of a capacitor and a fourth layer disposed between the first layer and the second layer, the third layer including an oxidized material, the third layer forming a dielectric of the capacitor.
- Intel corporation
- Thomas Sounart of Chandler AZ (US)
- Henning Braunisch of Phoenix AZ (US)
- Aleksandar Aleksov of Chandler AZ (US)
- Kristof Darmawikarta of Chandler AZ (US)
- Numair Ahmed of Chandler AZ (US)
- Darko Grujicic of Chandler AZ (US)
- Suddhasattwa Nad of Chandler AZ (US)
- Benjamin Duong of Phoenix AZ (US)
- Marcel Wall of Phoenix AZ (US)
- Shayan Kaviani of Phoenix AZ (US)
- H01G4/01
- H01G4/30
- H01G4/33
- H01L21/48
- H01L23/538
- CPC H01G4/01