Intel corporation (20240220129). NAND AGING PROTECTION SCHEME simplified abstract
Contents
NAND AGING PROTECTION SCHEME
Organization Name
Inventor(s)
Sriram Balasubrahmanyam of Folsom CA (US)
Jong Tai Park of Pleasanton CA (US)
Arti Sharma of Santa Clara CA (US)
Ashish Shukla of San Jose CA (US)
NAND AGING PROTECTION SCHEME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240220129 titled 'NAND AGING PROTECTION SCHEME
Simplified Explanation: The technology described in the patent application focuses on an aging protection scheme for memory structures by determining the completion of a burst cycle operation and applying different park statuses to even and odd node devices accordingly.
Key Features and Innovation:
- Technology determines completion of a burst cycle operation
- Alternates between first park status for even node devices and second park status for odd node devices
- Aging protection scheme for memory structures
Potential Applications: This technology can be applied in various memory systems, data storage devices, and integrated circuits where aging protection is crucial for maintaining performance and reliability.
Problems Solved:
- Ensures efficient operation of memory structures
- Mitigates aging effects on memory devices
- Enhances overall system reliability
Benefits:
- Improved memory structure longevity
- Enhanced system performance
- Increased reliability of memory devices
Commercial Applications: The technology can be utilized in the development of advanced memory systems for various industries such as consumer electronics, automotive, and telecommunications, where reliable memory operation is essential for optimal performance.
Questions about Aging Protection Scheme for Memory Structures: 1. How does the technology determine the completion of a burst cycle operation? 2. What are the potential implications of applying different park statuses to even and odd node devices?
Frequently Updated Research: Stay updated on advancements in memory structure aging protection technologies to ensure optimal performance and reliability in memory systems.
Original Abstract Submitted
systems, apparatuses, and methods may provide for technology for an aging protection scheme for memory structures. for example, such technology determines a completion of a burst cycle operation. such technology alternates between a first park status applied to even node devices and a second park status applied to odd node devices in response to the determined completion of the burst cycle operation.
