Intel corporation (20240215222). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM simplified abstract
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM
Organization Name
Inventor(s)
Abhishek Anil Sharma of Portland OR (US)
Tahir Ghani of Portland OR (US)
Sagar Suthram of Portland OR (US)
Anand S. Murthy of Portland OR (US)
Pushkar Ranade of San Jose CA (US)
Wilfred Gomes of Portland OR (US)
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240215222 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE POWER DELIVERY AND SIGNAL ROUTING FOR FRONT SIDE DRAM
Simplified Explanation: The patent application describes structures with backside power delivery and signal routing for front-side DRAM.
- Integrated circuit structure with front-side DRAM layer and backside structure for power delivery and signal routing.
- Backside structure includes metal lines for connecting to transistors in the DRAM layer.
- Front-side structure includes capacitors and metallization layers above the DRAM layer.
Key Features and Innovation:
- Integration of backside power delivery and signal routing for front-side DRAM.
- Efficient power delivery and signal routing to DRAM transistors.
- Improved performance and reliability of DRAM structures.
Potential Applications:
- Semiconductor industry for memory devices.
- Data centers for high-performance computing.
- Consumer electronics for mobile devices and computers.
Problems Solved:
- Efficient power delivery to DRAM transistors.
- Enhanced signal routing for improved performance.
- Integration of backside structures for better reliability.
Benefits:
- Improved performance of DRAM devices.
- Enhanced reliability and efficiency.
- Potential cost savings in manufacturing.
Commercial Applications: Commercializing Backside Power Delivery and Signal Routing for Front-Side DRAM Structures
Prior Art: Prior art related to backside power delivery and signal routing in semiconductor devices.
Frequently Updated Research: Ongoing research on backside power delivery and signal routing in integrated circuits.
Questions about Backside Power Delivery and Signal Routing for Front-Side DRAM Structures: 1. How does backside power delivery improve the performance of DRAM devices? 2. What are the potential cost savings associated with integrating backside structures in DRAM technology?
Original Abstract Submitted
structures having backside power delivery and signal routing for front side dram are described. in an example, an integrated circuit structure includes a front side structure including a dynamic random access memory (dram) layer having one or more capacitors over one or more transistors, and a plurality of metallization layers above the dram layer. a backside structure is below and coupled to the transistors of the dram layer, the backside structure including metal lines for power delivery and signal routing to the one or more transistors of the dram layer.
