Intel corporation (20240213331). GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
Contents
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY
Organization Name
Inventor(s)
Han Wui Then of Portland OR (US)
Sansaptak Dasgupta of Milpitas CA (US)
Pratik Koirala of Portland OR (US)
Wesley Harrison of Portland OR (US)
Marko Radosavljevic of Portland OR (US)
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240213331 titled 'GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRATED CIRCUIT TECHNOLOGY
- Simplified Explanation:**
The patent application describes a gallium nitride (GaN) layer on a substrate carburization for integrated circuit technology. In simple terms, it involves a structure with layers of silicon, carbon, and gallium nitride.
- Key Features and Innovation:**
- Integrated circuit structure with a substrate containing silicon.
- Layer of silicon and carbon above the substrate.
- Gallium and nitrogen layer on top of the silicon and carbon layer.
- Potential Applications:**
This technology can be used in the development of advanced integrated circuits for various electronic devices, such as smartphones, computers, and other electronic systems.
- Problems Solved:**
This technology addresses the need for improved performance and efficiency in integrated circuit technology by utilizing gallium nitride layers on substrates.
- Benefits:**
- Enhanced performance and efficiency in integrated circuits.
- Improved reliability and durability of electronic devices.
- Potential for smaller and more powerful electronic systems.
- Commercial Applications:**
The technology could have significant commercial applications in the semiconductor industry, leading to the development of faster and more energy-efficient electronic devices.
- Questions about Gallium Nitride Layer on Substrate Carburization:**
1. How does the integration of gallium nitride layers improve the performance of integrated circuits? 2. What are the potential challenges in implementing this technology on a commercial scale?
- Frequently Updated Research:**
Researchers are continually exploring new methods to optimize the carburization process and enhance the properties of gallium nitride layers for integrated circuit applications.
Original Abstract Submitted
gallium nitride (gan) layer on substrate carburization for integrated circuit technology is described. in an example, an integrated circuit structure includes a substrate including silicon. a layer comprising silicon and carbon is above the substrate. a layer comprising gallium and nitrogen is on the layer comprising silicon and carbon.
