Intel corporation (20240213140). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH simplified abstract

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

Organization Name

intel corporation

Inventor(s)

Han Wui Then of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Samuel James Bader of Hillsboro OR (US)

Ahmad Zubair of Hillsboro OR (US)

Pratik Koirala of Portland OR (US)

Michael S. Beumer of Portland OR (US)

Heli Chetanbhai Vora of Hillsboro OR (US)

Ibrahim Ban of Beaverton OR (US)

Nityan Nair of Portland OR (US)

Thomas Hoff of Hillsboro OR (US)

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213140 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

Simplified Explanation: The patent application describes structures with high voltage capacitors on the backside for front side GaN-based devices.

• The integrated circuit structure includes a front side structure with a GaN-based device layer and metallization layers.
• A backside structure below the GaN-based layer includes metal layers and laterally-recessed metal insulator metal capacitors.

Key Features and Innovation:

• Integration of high voltage capacitors on the backside of GaN-based devices.
• Use of metal insulator metal capacitors for improved performance.
• Enhanced reliability and efficiency of the integrated circuit structure.

Potential Applications:

• Power electronics
• RF amplifiers
• LED lighting
• Solar inverters

Problems Solved:

• Improved voltage handling capabilities
• Enhanced performance and reliability of GaN-based devices
• Increased efficiency in power electronics

Benefits:

• Higher voltage tolerance
• Improved device performance
• Enhanced reliability and efficiency

Commercial Applications: Potential commercial applications include power electronics, RF amplifiers, LED lighting, and solar inverters. The technology can lead to more efficient and reliable electronic devices in various industries.

Questions about GaN-based devices: 1. How do GaN-based devices compare to traditional silicon-based devices in terms of performance and efficiency? 2. What are the key challenges in integrating high voltage capacitors into GaN-based devices?

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Original Abstract Submitted

structures having backside high voltage capacitors for front side gan-based devices are described. in an example, an integrated circuit structure includes a front side structure including a gan-based device layer, and one or more metallization layers above the gan-based device layer. a backside structure is below and coupled to the gan-based layer, the backside structure including metal layers and one or more alternating laterally-recessed metal insulator metal capacitors.