Intel corporation (20240213026). CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract

CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS

Organization Name

intel corporation

Inventor(s)

Matthew J. Prince of Portland OR (US)

Lawrence Zaino of Beaverton OR (US)

Barry B. Butler of Hillsboro OR (US)

Girish Sharma of Hillsboro OR (US)

Robert R. Mitchell of Portland OR (US)

Rajaram A. Pai of Lake Oswego OR (US)

Niels Sveum of Portland OR (US)

Alison V. Davis of Portland OR (US)

Chun Chen Kuo of Portland OR (US)

Reza Bayati of Portland OR (US)

Swapnadip Ghosh of Hillsboro OR (US)

CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213026 titled 'CHEMICAL MECHANICAL POLISHING OF METAL GATE CUTS FORMED AFTER SOURCE AND DRAIN CONTACTS

The abstract describes techniques for forming semiconductor devices with a gate cut that is created after the source or drain contacts are formed, resulting in a top surface that is flush with the top surface of the contacts.

• Gate cut formed after source or drain contacts
• Top surface of gate cut is coplanar with top surface of contacts
• Gate structure with dielectric layer and conductive contacts over source/drain regions
• Gate cut extends through entire thickness of gate structure
• Polishing of gate cut to be coplanar with dielectric layer and contacts

Potential Applications

This technology can be applied in the manufacturing of advanced semiconductor devices, particularly in the field of integrated circuits and microelectronics.

Problems Solved

This innovation addresses the challenge of achieving precise alignment and planarity between the gate structure and the source/drain contacts in semiconductor devices.

Benefits

- Improved device performance and reliability - Enhanced manufacturing efficiency - Enables the fabrication of high-density and high-performance semiconductor devices

Commercial Applications

Title: Advanced Semiconductor Device Manufacturing Technology This technology can be utilized in the production of cutting-edge electronic devices such as smartphones, tablets, and computers, as well as in emerging technologies like IoT devices and autonomous vehicles.

Prior Art

Further research can be conducted in the field of semiconductor device fabrication processes, particularly focusing on methods for improving the alignment and planarity of gate structures and source/drain contacts.

Frequently Updated Research

Researchers are continuously exploring new techniques and materials to further enhance the performance and efficiency of semiconductor devices, including advancements in gate cut formation processes.

Questions about Semiconductor Device Manufacturing

How does the gate cut formation process impact the overall performance of semiconductor devices?

The gate cut formation process plays a crucial role in ensuring precise alignment and planarity, which directly affects the electrical characteristics and reliability of the devices.

What are the key considerations for optimizing the gate cut formation technique in semiconductor device manufacturing?

Optimizing the gate cut formation technique involves factors such as material selection, process control, and integration with existing fabrication processes to achieve the desired device performance and yield.

Original Abstract Submitted

techniques are provided herein to form semiconductor devices that include a gate cut formed after the formation of source or drain contacts and with a top surface that is substantially coplanar with a top surface of the source or drain contacts. an example semiconductor device includes a gate structure around or otherwise on a semiconductor region and a dielectric layer present on a top surface of the gate structure. conductive contacts are formed over source and drain regions along a source/drain contact recess or trench. the gate structure may be interrupted with a gate cut that extends through an entire thickness of the gate structure and includes a dielectric material. a top surface of the gate cut may be polished until it is substantially coplanar with a top surface of the dielectric layer over the gate structure and a top surface of the source or drain contacts.