Intel corporation (20240210821). PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST simplified abstract
Contents
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST
Organization Name
Inventor(s)
Charles Cameron Mokhtarzadeh of Portland OR (US)
James Blackwell of Portland OR (US)
Scott Semproni of Portland OR (US)
Scott B. Clendenning of Portland OR (US)
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240210821 titled 'PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST
The abstract of this patent application discusses the disclosure of precursors and methods related to a bismuth oxy-carbide-based photoresist.
- Method for forming a bismuth oxy-carbide-based photoresist by exposing a bismuth-containing precursor and a co-reagent to a substrate.
- The bismuth oxy-carbide-based photoresist has a formula BiOx on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5.
- The bismuth-containing precursor includes various organic groups such as methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl.
- The co-reagent can be water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.
- Potential Applications:**
This technology can be used in the semiconductor industry for photolithography processes.
- Problems Solved:**
This technology addresses the need for a photoresist material with improved properties for high-resolution patterning.
- Benefits:**
The bismuth oxy-carbide-based photoresist offers enhanced performance in photolithography processes, leading to better quality and more precise semiconductor devices.
- Commercial Applications:**
The commercial applications of this technology include semiconductor manufacturing, electronics industry, and research institutions.
- Questions about Bismuth Oxy-Carbide-Based Photoresist:**
1. How does the bismuth oxy-carbide-based photoresist compare to traditional photoresist materials in terms of performance? 2. What are the potential environmental impacts of using bismuth oxy-carbide-based photoresist in semiconductor manufacturing processes?
Original Abstract Submitted
precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. in some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula biocon the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula r′bi(nr)or r′binrwhere r includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or nris piperidine, and r′ includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. in some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.
