Intel corporation (20240204103). TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS simplified abstract

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

Organization Name

intel corporation

Inventor(s)

Rohit Galatage of Hillsboro OR (US)

Cheng-Ying Huang of Portland OR (US)

Dan S. Lavric of Portland OR (US)

Sarah Atanasov of Beaverton OR (US)

Shao Ming Koh of Tigard OR (US)

Jack T. Kavalieros of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

Jami Wiedemer of Scappoose OR (US)

Munzarin Qayyum of Hillsboro OR (US)

Evan Clinton of Carrollton GA (US)

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204103 titled 'TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

Simplified Explanation

The patent application describes transistor gate-channel arrangements with gate stacks containing multiple dipole materials, including p-shifter and n-shifter dipole materials.

• The invention involves transistor gate stacks with unique dipole materials.
• These dipole materials include p-shifter and n-shifter materials.
• The arrangement aims to enhance the performance of transistors by utilizing specific dipole materials in the gate dielectric layer.

Key Features and Innovation

• Utilization of multiple dipole materials in transistor gate stacks.
• Inclusion of p-shifter and n-shifter dipole materials for improved transistor performance.
• Gate dielectric layer with a combination of dipole materials to enhance transistor functionality.

Potential Applications

The technology can be applied in the semiconductor industry for the development of advanced transistors with enhanced performance characteristics.

Problems Solved

• Improved transistor performance.
• Enhanced functionality of gate-channel arrangements.
• Optimization of dipole materials for better transistor operation.

Benefits

• Increased efficiency of transistors.
• Enhanced overall performance of electronic devices.
• Potential for more advanced semiconductor technologies.

Commercial Applications

Title: Advanced Semiconductor Transistor Technology for Enhanced Performance This technology could be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various commercial applications such as smartphones, computers, and other electronic gadgets.

Prior Art

Readers interested in prior art related to this technology may explore research articles and patents in the field of semiconductor materials and transistor design.

Frequently Updated Research

Researchers in the semiconductor industry are continuously exploring new materials and techniques to further enhance transistor performance. Stay updated on the latest advancements in transistor technology for potential future developments.

Questions about Transistor Gate-Channel Arrangements

What are the potential benefits of using multiple dipole materials in transistor gate stacks?

Using multiple dipole materials can enhance transistor performance by optimizing the interaction between the gate dielectric layer and the channel material, leading to improved efficiency and functionality.

How do p-shifter and n-shifter dipole materials contribute to the operation of transistors?

P-shifter and n-shifter dipole materials play a crucial role in modifying the electrical properties of the gate dielectric layer, influencing the behavior of the transistor and improving its overall performance.

Original Abstract Submitted

disclosed herein are transistor gate-channel arrangements with transistor gate stacks that include multiple dipole materials, and related methods and devices. for example, in some embodiments, a transistor gate-channel arrangement may include a channel material and a transistor gate stack. the transistor gate stack may include a gate electrode material and a gate dielectric material between the gate electrode material and the channel material, where the gate dielectric material includes a first dipole material and a second dipole material where one of the first and second dipole materials is a p-shifter dipole material and the other one is an n-shifter dipole material.