Intel corporation (20240204060). NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORIBBONS simplified abstract

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORIBBONS

Organization Name

intel corporation

Inventor(s)

Rohit Galatage of Hillsboro OR (US)

Cheng-Ying Huang of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Marko Radosavljevic of Portland OR (US)

Mauro J. Kobrinsky of Portland OR (US)

Jami Wiedemer of Scappoose OR (US)

Munzarin Qayyum of Hillsboro OR (US)

Evan Clinton of Carrollton GA (US)

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORIBBONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240204060 titled 'NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORIBBONS

Simplified Explanation: The patent application describes IC structures with nanoribbon stacks that do not have dielectric protection caps for the top nanoribbons. These structures include a stack of nanoribbons, an opening over the top nanoribbon, and a gate electrode material in the opening. The gate insulator on the sidewalls of the opening is discontinuous between different portions.

• **Key Features and Innovation:**

   - IC structures with nanoribbon stacks without dielectric protection caps.
   - Gate electrode material in the opening over the top nanoribbon.
   - Materially discontinuous gate insulator on the sidewalls of the opening.

• **Potential Applications:**

   - Advanced integrated circuit design.
   - Nanotechnology applications.
   - Semiconductor industry.

• **Problems Solved:**

   - Lack of dielectric protection caps for top nanoribbons.
   - Enhancing the performance of IC structures.
   - Improving gate insulator design.

• **Benefits:**

   - Increased efficiency in IC structures.
   - Enhanced control over nanoribbon stacks.
   - Potential for higher performance in electronic devices.

• **Commercial Applications:**

   - Nanoelectronics manufacturing.
   - Semiconductor fabrication industry.
   - Research and development in nanotechnology.

• **Prior Art:**

   - Readers can explore prior patents related to nanoribbon structures and IC design without dielectric protection caps for top nanoribbons.

• **Frequently Updated Research:**

   - Stay updated on advancements in nanoribbon technology and semiconductor device design.

Questions about IC Structures with Nanoribbon Stacks:

1. *What are the potential implications of using nanoribbon stacks without dielectric protection caps in IC structures?*

  - The absence of dielectric protection caps may lead to improved performance and efficiency in IC structures, but it could also pose challenges in terms of reliability and durability.

2. *How does the discontinuity in the gate insulator on the sidewalls of the opening impact the overall functionality of the IC structure?*

  - The discontinuity in the gate insulator may affect the control and modulation of electrical signals within the nanoribbon stack, potentially influencing the device's performance and reliability.

Original Abstract Submitted

ic structures with nanoribbon stacks without dielectric protection caps for top nanoribbons, and associated methods and devices, are disclosed. an example ic structure includes a stack of nanoribbons, an opening over the top nanoribbon of the stack of nanoribbons, and a gate electrode material in the opening, where the opening has a first portion, a second portion, and a third portion, the second portion is between the first portion and the third portion, and where a width of a portion of the gate electrode material in the second portion is smaller than a width of a portion of the gate electrode material in the first portion. in such an ic structure, a gate insulator on the sidewalls of the first portion of the opening is materially discontinuous from a gate insulator on the sidewalls of the third portion of the opening.