Intel corporation (20240204059). GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY simplified abstract
Contents
- 1 GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Key Features and Innovation
- 1.6 Potential Applications
- 1.7 Problems Solved
- 1.8 Benefits
- 1.9 Commercial Applications
- 1.10 Prior Art
- 1.11 Frequently Updated Research
- 1.12 Questions about Gallium Nitride (GaN) with Interlayers
- 1.13 Original Abstract Submitted
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY
Organization Name
Inventor(s)
Pratik Koirala of Portland OR (US)
Michael S. Beumer of Portland OR (US)
Marko Radosavljevic of Portland OR (US)
Han Wui Then of Portland OR (US)
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204059 titled 'GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHNOLOGY
Simplified Explanation
The patent application describes a technology involving gallium nitride (GaN) with interlayers for integrated circuit technology. In simple terms, it involves a structure that includes a layer of gallium and nitrogen with an interlayer that helps confine defects to a lower portion of the layer.
- The integrated circuit structure includes a substrate made of silicon.
- A layer containing gallium and nitrogen is positioned above the substrate.
- The layer with gallium and nitrogen has an interlayer that confines defects to a lower part of the layer.
Key Features and Innovation
- Integration of gallium nitride (GaN) with interlayers for improved performance in integrated circuit technology.
- Interlayer helps confine defects to a lower portion of the layer, enhancing the overall quality of the structure.
Potential Applications
The technology can be applied in various integrated circuit devices, such as power amplifiers, RF devices, and high-frequency applications.
Problems Solved
- Improved quality and performance of integrated circuits by confining defects to specific areas.
- Enhanced reliability and efficiency in integrated circuit technology.
Benefits
- Higher quality and reliability in integrated circuit structures.
- Improved performance and efficiency in various applications.
- Enhanced functionality in power amplifiers and RF devices.
Commercial Applications
- Potential commercial uses include telecommunications, aerospace, and consumer electronics industries.
- Market implications include increased demand for high-performance integrated circuit technology.
Prior Art
Readers can explore prior research on gallium nitride (GaN) technology in integrated circuits to understand the evolution of this field.
Frequently Updated Research
Stay updated on the latest advancements in gallium nitride (GaN) technology for integrated circuits to leverage the most current innovations in the industry.
Questions about Gallium Nitride (GaN) with Interlayers
What are the key advantages of using interlayers in gallium nitride (GaN) technology for integrated circuits?
Interlayers help confine defects, improving the overall quality and reliability of integrated circuit structures.
How does the integration of gallium nitride (GaN) with interlayers impact the performance of RF devices?
The integration enhances the efficiency and reliability of RF devices, making them suitable for high-frequency applications.
Original Abstract Submitted
gallium nitride (gan) with interlayers for integrated circuit technology is described. in an example, an integrated circuit structure includes a substrate including silicon. a layer including gallium and nitrogen is above the substrate. the layer including gallium and nitrogen has an interlayer therein. the interlayer confines a plurality of defects to a lower portion of the layer including gallium and nitrogen.
