Intel corporation (20240204048). EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT simplified abstract
Contents
EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
Organization Name
Inventor(s)
Hwichan Jun of Portland OR (US)
EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240204048 titled 'EPITAXIAL SOURCE OR DRAIN REGION WITH A WRAPPED CONDUCTIVE CONTACT
The patent application describes techniques for forming semiconductor devices with epitaxial source or drain regions wrapped by a conductive contact to improve ohmic contact.
- The semiconductor devices have a first semiconductor region between source or drain regions, with a subfin region adjacent to a dielectric layer.
- A conductive layer surrounds the source or drain region, making contact with the sidewalls and upper and lower surfaces.
- A dielectric layer is present between the conductive contact and the subfin region.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Improving ohmic contact in semiconductor devices - Enhancing conductivity in source or drain regions
Benefits: - Better performance of semiconductor devices - Increased efficiency in electronic circuits
Commercial Applications: Title: Enhanced Semiconductor Devices for Improved Performance This technology can be used in the production of high-performance electronic devices, leading to faster and more reliable products in various industries.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing and ohmic contact improvement to gain a deeper understanding of the field.
Frequently Updated Research: Researchers are continually exploring new materials and techniques to enhance the performance of semiconductor devices, which may impact the development of this technology.
Questions about Semiconductor Devices with Epitaxial Source or Drain Regions Wrapped by a Conductive Contact: 1. How does the conductive layer improve the ohmic contact in semiconductor devices? 2. What are the potential applications of this technology in the electronics industry?
Original Abstract Submitted
techniques are provided herein to form semiconductor devices having one or more epitaxial source or drain regions wrapped by a conductive contact to form an improved ohmic contact. a first semiconductor device includes a first semiconductor region extending between a first source or drain region and a second source or drain region, and a second semiconductor device includes a second semiconductor region extending between the first source or drain region and a third source or drain region. the first and second semiconductor devices include a subfin region adjacent to a dielectric layer. a conductive layer extends around the first source or drain region such that the conductive layer at least contacts the sidewalls of the first source or drain region and both upper and lower surfaces of the source or drain region. a dielectric layer is also present between the conductive contact and the subfin region.
