Intel corporation (20240201586). PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST simplified abstract

PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST

Organization Name

intel corporation

Inventor(s)

James Blackwell of Portland OR (US)

Charles Cameron Mokhtarzadeh of Portland OR (US)

Lauren Elizabeth Doyle

Eric Mattson of Portland OR (US)

Patrick Theofanis of Portland OR (US)

John J. Plombon of Portland OR (US)

Michael Robinson of Beaverton OR (US)

Marie Krysak of Portland OR (US)

Paul Meza-morales of Hillsboro OR (US)

Scott Semproni of Portland OR (US)

Scott B. Clendenning of Portland OR (US)

PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240201586 titled 'PRECURSORS AND METHODS FOR PRODUCING TIN-BASED PHOTORESIST

Simplified Explanation

This patent application discloses precursors and methods for a tin-based photoresist. The method involves exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist with tin clusters, then selectively exposing it to extreme ultraviolet radiation and heat to create crosslinking between the tin clusters.

• Tin-based photoresist formation method disclosed
• Tin-containing precursor and co-reagent exposed to substrate
• Selective exposure to extreme ultraviolet radiation
• Heat exposure for crosslinking between tin clusters

Key Features and Innovation

• Method for forming tin-based photoresist with tin clusters
• Precursor with formula RRSn(N(CH)) and various R groups
• Chelating alkyl-amine or alkyl-amide ligand with tin-based heterocycle
• Selective exposure to extreme ultraviolet radiation for patterning

Potential Applications

• Semiconductor manufacturing
• Photolithography processes
• Advanced microelectronics fabrication

Problems Solved

• Improved resolution in photoresist patterning
• Enhanced crosslinking between tin clusters
• Increased efficiency in extreme ultraviolet lithography

Benefits

• Higher precision in semiconductor device manufacturing
• Enhanced performance in microelectronics fabrication
• Potential cost savings in lithography processes

Commercial Applications

Tin-Based Photoresist Technology in Semiconductor Manufacturing

This technology can revolutionize the semiconductor manufacturing industry by offering a more efficient and precise method for photoresist patterning. With improved resolution and crosslinking capabilities, this innovation can lead to higher-quality semiconductor devices and advanced microelectronics.

Prior Art

There may be prior art related to tin-based photoresists, particularly in the field of semiconductor lithography and materials science. Researchers and industry professionals can explore academic journals, patent databases, and industry conferences for relevant information on similar technologies.

Frequently Updated Research

Researchers are continually exploring new materials and methods for photoresist patterning in semiconductor manufacturing. Stay updated on the latest advancements in extreme ultraviolet lithography and tin-based photoresists to remain at the forefront of technological innovation.

Questions about Tin-Based Photoresist Technology

What are the potential environmental impacts of using tin-based photoresists in semiconductor manufacturing?

Tin-based photoresists may have environmental implications due to the use of tin-containing precursors. Research is ongoing to assess the environmental impact and develop sustainable practices in semiconductor manufacturing.

How does the cost of implementing tin-based photoresists compare to traditional photoresist materials?

The cost of tin-based photoresists may vary depending on the specific materials and processes involved. Further cost-benefit analysis is needed to determine the economic feasibility of adopting this technology in semiconductor manufacturing.

Original Abstract Submitted

precursors and methods related to a tin-based photoresist are disclosed herein. in some embodiments, a method for forming a tin-based photoresist may include exposing a tin-containing precursor and a co-reagent to a substrate to form a photoresist having tin clusters; selectively exposing the photoresist to extreme ultraviolet radiation (euv); and exposing the photoresist to heat to form, in the region, crosslinking between the tin clusters. in some embodiments, the precursor has a formula rrsn(n(ch)), and rand rare selected from the group consisting of neo-silyl, neo-pentyl, phenyl, benzyl, methyl-bis(trimethylsilyl), methyl, ethyl, isopropyl, tert-butyl, n-butyl, n,n-dimethylpropylamine, and n, n-dimethlybutylamine. in other embodiments, the precursor includes a chelating alkyl-amine or alkyl-amide ligand featuring a 5 membered or 6 membered tin-based heterocycle bound �-c,n with an alkyl group on the ligand backbone, wherein the alkyl group includes methyl, ethyl, vinyl, hydrogen, or tert-butyl.