Intel corporation (20240186416). TMD INVERTED NANOWIRE INTEGRATION simplified abstract

TMD INVERTED NANOWIRE INTEGRATION

Organization Name

intel corporation

Inventor(s)

Kevin P. O'brien of Portland OR (US)

Carl Naylor of Portland OR (US)

Chelsey Dorow of Portland OR (US)

Kirby Maxey of Hillsboro OR (US)

Tanay Gosavi of Portland OR (US)

Ashish Verma Penumatcha of Beaverton OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Chia-Ching Lin of Portland OR (US)

Sudarat Lee of Hillsboro OR (US)

Uygar E. Avci of Portland OR (US)

TMD INVERTED NANOWIRE INTEGRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186416 titled 'TMD INVERTED NANOWIRE INTEGRATION

Simplified Explanation

The patent application describes semiconductor devices with two-dimensional (2D) semiconductor channels and methods of forming such devices. In one embodiment, the device includes a source contact and a drain contact, with a 2D semiconductor channel between them, which is in the form of a shell.

• Two-dimensional (2D) semiconductor channels in semiconductor devices
• Source contact and drain contact in the device
• 2D semiconductor channel in the form of a shell
• Methods of forming semiconductor devices with 2D semiconductor channels

Potential Applications

The technology can be applied in the development of advanced electronic devices, such as high-performance transistors, sensors, and integrated circuits.

Problems Solved

1. Enhanced performance and efficiency in electronic devices. 2. Improved scalability and miniaturization of semiconductor components.

Benefits

1. Increased speed and reliability of electronic devices. 2. Reduction in power consumption. 3. Potential for smaller and more compact electronic devices.

Potential Commercial Applications

Optimizing the design and production of semiconductor devices for various industries, including consumer electronics, telecommunications, and automotive.

Possible Prior Art

Previous research has focused on the development of 2D materials for semiconductor applications, such as graphene and transition metal dichalcogenides (TMDs). However, the specific configuration of a 2D semiconductor channel in the form of a shell may be a novel aspect of this patent application.

What are the limitations of this technology in current applications?

One limitation of this technology in current applications is the complexity of manufacturing processes required to create semiconductor devices with 2D semiconductor channels in the form of a shell. Additionally, the integration of such devices into existing electronic systems may pose challenges in terms of compatibility and performance optimization.

Original Abstract Submitted

embodiments disclosed herein comprise semiconductor devices with two dimensional (2d) semiconductor channels and methods of forming such devices. in an embodiment, the semiconductor device comprises a source contact and a drain contact. in an embodiment, a 2d semiconductor channel is between the source contact and the drain contact. in an embodiment, the 2d semiconductor channel is a shell.