Intel corporation (20240186395). LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT simplified abstract

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LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT

Organization Name

intel corporation

Inventor(s)

Krishna Ganesan of Portland OR (US)

Ala Alazizi of Portland OR (US)

Ankit Kirit Lakhani of Hillsboro OR (US)

Peter P. Sun of Beaverton OR (US)

Diana Ivonne Paredes of Portland OR (US)

LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186395 titled 'LINED CONDUCTIVE STRUCTURES FOR TRENCH CONTACT

Simplified Explanation

The patent application describes lined conductive via structures for trench contact in an integrated circuit structure.

  • The integrated circuit structure includes gate structures over vertical stacks of horizontal nanowires.
  • Conductive trench contact structures alternate with gate structures.
  • Each conductive contact structure has an upper portion over a lower portion.
  • The upper portion of each conductive contact structure has a dielectric liner along its sides.
  • The dielectric liner does not touch the ends of the upper portion of each conductive contact structure.
      1. Potential Applications

This technology could be applied in the semiconductor industry for advanced integrated circuit designs.

      1. Problems Solved

This technology solves the problem of improving contact resistance and enhancing electrical performance in integrated circuits.

      1. Benefits

The benefits of this technology include increased efficiency, improved reliability, and enhanced performance of integrated circuits.

      1. Potential Commercial Applications

This technology could be utilized in the development of high-performance electronic devices and systems.

      1. Possible Prior Art

Prior art may include similar techniques for improving contact structures in integrated circuits.

        1. What are the potential manufacturing challenges associated with implementing this technology?

Manufacturing challenges may include precise alignment of the conductive trench contact structures and the gate structures, as well as ensuring uniformity in the dielectric liner deposition process.

        1. How does this technology compare to existing methods for trench contact structures in integrated circuits?

This technology offers improved electrical performance and reduced contact resistance compared to traditional methods for trench contact structures in integrated circuits.


Original Abstract Submitted

lined conductive via structures for trench contact are described. in an example, an integrated circuit structure includes a plurality of gate structures over corresponding ones of a plurality of vertical stacks of horizontal nanowires. the integrated circuit structure also includes a plurality of conductive trench contact structures alternating with the plurality of gate structures, each of the plurality of conductive contact structures having an upper portion over a lower portion, the upper portion of each of the plurality of conductive trench contact structures having a length between ends. the integrated circuit structure also includes a dielectric liner in lateral contact with sides along the length of the upper portion of each of the plurality of conductive contact structures, wherein the dielectric liner is not in contact with the ends of the upper portion of each of the plurality of conductive contact structures.

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