Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract

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GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES

Organization Name

intel corporation

Inventor(s)

Cory Bomberger of Portland OR (US)

Anand Murthy of Portland OR (US)

Susmita Ghose of Hillsboro OR (US)

Siddharth Chouksey of Portland OR (US)

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186378 titled 'GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES

Simplified Explanation

The abstract describes gate-all-around integrated circuit structures with embedded GeSnB source or drain structures. Here are the key points of the patent:

  • Integrated circuit structure with vertical arrangement of horizontal nanowires above a fin.
  • Fin includes defect modification layer on first semiconductor layer and second semiconductor layer on the defect modification layer.
  • Gate stack surrounds the vertical arrangement of horizontal nanowires.
  • First epitaxial source or drain structure at one end of the nanowires, and second epitaxial source or drain structure at the other end.
      1. Potential Applications

This technology could be applied in advanced semiconductor devices, high-speed transistors, and integrated circuits.

      1. Problems Solved

This innovation addresses the need for improved performance and efficiency in semiconductor devices by incorporating GeSnB source or drain structures.

      1. Benefits

The benefits of this technology include enhanced device performance, increased speed, and reduced power consumption in integrated circuits.

      1. Potential Commercial Applications

Potential commercial applications include next-generation processors, memory devices, and communication systems.

      1. Possible Prior Art

Prior art may include similar structures with different materials or configurations, such as traditional silicon-based transistors.

        1. What are the potential challenges in scaling this technology for mass production?

Scaling this technology for mass production may face challenges related to manufacturing consistency, cost-effectiveness, and integration with existing fabrication processes.

        1. How does this innovation compare to other emerging technologies in the field of semiconductor devices?

This innovation stands out by incorporating GeSnB materials for improved performance, efficiency, and reliability compared to other emerging technologies utilizing traditional semiconductor materials.


Original Abstract Submitted

gate-all-around integrated circuit structures having embedded gesnb source or drain structures, and methods of fabricating gate-all-around integrated circuit structures having embedded gesnb source or drain structures, are described. for example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires above a fin, the fin including a defect modification layer on a first semiconductor layer, and a second semiconductor layer on the defect modification layer. a gate stack is around the vertical arrangement of horizontal nanowires. a first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, and a second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires.

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