Intel corporation (20240186270). MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE THEREIN simplified abstract

MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE THEREIN

Organization Name

intel corporation

Inventor(s)

Srinivas V. Pietambaram of Chandler AZ (US)

Claudio A. Alvarez Barros of Santiago (CL)

Beomseok Choi of Chandler AZ (US)

Gang Duan of Chandler AZ (US)

Jeremy D. Ecton of Gilbert AZ (US)

Brandon Christian Marin of Gilbert AZ (US)

Suddhasattwa Nad of Chandler AZ (US)

Hiroki Tanaka of Gilbert AZ (US)

MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE THEREIN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186270 titled 'MICROELECTRONIC ASSEMBLY HAVING ANTIFERROMAGNETIC FILM STRUCTURE THEREIN

Simplified Explanation

The microelectronic structure described in the patent application includes a core layer made of an electrically non-conductive material, electrically conductive through core vias (TCVs), a dielectric layer with electrically conductive structures, and a magnetic inductor with an antiferromagnetic (AF) structure.

• Core layer made of electrically non-conductive material
• Electrically conductive through core vias (TCVs)
• Dielectric layer with electrically conductive structures
• Magnetic inductor with antiferromagnetic (AF) structure

1. 1. 1. Potential Applications

This technology could be applied in the fields of microelectronics, semiconductor packaging, and IC device assembly.

1. 1. 1. Problems Solved

This technology solves the problem of integrating a magnetic inductor with an antiferromagnetic structure into a microelectronic structure.

1. 1. 1. Benefits

The benefits of this technology include improved performance and efficiency in microelectronic devices, as well as the potential for miniaturization.

1. 1. 1. Potential Commercial Applications

Potential commercial applications of this technology include the development of advanced microelectronic devices for various industries such as telecommunications, computing, and automotive.

1. 1. 1. Possible Prior Art

One possible prior art for this technology could be the integration of magnetic inductors in microelectronic structures, but the specific use of an antiferromagnetic structure may be a novel aspect.

1. 1. 1. 1. What are the specific materials used in the antiferromagnetic structure?

The antiferromagnetic structure includes a first ferromagnetic (FM) layer, an exchange coupling (EC) layer, a second FM layer, and a pinning (P) layer with manganese and platinum or iridium.

1. 1. 1. 1. How does the antiferromagnetic structure contribute to the overall functionality of the microelectronic structure?

The antiferromagnetic structure helps enhance the magnetic properties of the inductor, leading to improved performance and efficiency in the microelectronic device.

Original Abstract Submitted

a microelectronic structure, a semiconductor package, an ic device assembly, and a method. the structure includes a core layer including an electrically non-conductive material; electrically conductive through core vias (tcvs) through the core layer; a dielectric layer on the core layer with electrically conductive structures extending therethrough and electrically coupled to the tcvs; and a magnetic inductor (mi) within at least one of the core layer or the build-up layer and including an antiferromagnetic (af) structure. the af structure includes a first ferromagnetic (fm) layer; an exchange coupling (ec) layer on the first fm layer and including a non-magnetic metal material; a second fm layer on the ec layer, the ec layer between the first fm layer and the second fm layer; and a pinning (p) layer including manganese and at least one of platinum or iridium, the second fm layer between the ec layer and the p layer.