Intel corporation (20240186127). SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract

SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

Organization Name

intel corporation

Inventor(s)

Ilya V. Karpov of Portland OR (US)

Aaron A. Budrevich of Portland OR (US)

Gilbert Dewey of Beaverton OR (US)

Matthew V. Metz of Portland OR (US)

Jack T. Kavalieros of Portland OR (US)

Dan S. Lavric of Portland OR (US)

SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240186127 titled 'SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

Simplified Explanation

The integrated circuit structure described in the patent application involves the use of sputter targets containing metals doped with appropriate dopants to deposit a conductive layer on a source or drain region, which is then annealed to form a region including metals and semiconductor materials between the source or drain region and a contact. The source or drain region contains a first dopant, while the region contains a second dopant. The first dopant may be different from the second dopant, or they may be the same elementally with concentrations within 20% of each other.

• Sputter targets with doped metals are used to deposit a conductive layer on a source or drain region.
• The deposited layer is annealed to form a region with metals and semiconductor materials between the source or drain region and a contact.
• The source or drain region contains a first dopant, while the region contains a second dopant.
• The first and second dopants may be different or the same elementally, with concentrations within 20% of each other.

Potential Applications

The technology described in the patent application could be applied in the semiconductor industry for the manufacturing of integrated circuits, specifically in the fabrication of source or drain regions with improved conductivity and contact resistance.

Problems Solved

This technology addresses the challenge of achieving low contact resistance and high conductivity in integrated circuit structures, which is crucial for the performance and efficiency of electronic devices.

Benefits

- Enhanced conductivity in source or drain regions - Improved contact resistance - Increased performance and efficiency of integrated circuits

Potential Commercial Applications

The technology could be utilized in the production of various electronic devices such as smartphones, computers, and other consumer electronics to enhance their overall performance and reliability.

Possible Prior Art

One possible prior art related to this technology is the use of ion implantation techniques to introduce dopants into semiconductor materials for improving conductivity in integrated circuits.

What are the limitations of this technology in terms of scalability and cost-effectiveness?

One limitation of this technology could be the scalability of the manufacturing process to mass produce integrated circuits with consistent and reliable performance. Another limitation could be the cost-effectiveness of using sputter targets containing doped metals for deposition processes.

Original Abstract Submitted

an integrated circuit structure includes a source or drain region, and a contact coupled to the source or drain region. sputter targets that include metals doped with the appropriate dopant types are used to deposit a conductive layer on the source or drain region that is annealed to form a region including metals and semiconductor materials between the source or drain region and the contact. a first dopant is within the source or drain region, and a second dopant is within the region. in one example, the first dopant is elementally different from the second dopant. in another example, the first dopant is elementally the same as the second dopant, wherein a concentration of the first dopant within a section of the source or drain region is within 20% of a concentration of the second dopant within the region.