Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Organization Name

intel corporation

Inventor(s)

Jeffrey S. Leib of Beaverton OR (US)

Srijit Mukherjee of Portland OR (US)

Vinay Bhagwat of Hillsboro OR (US)

Michael L. Hattendorf of Portland OR (US)

Christopher P. Auth of Portland OR (US)

DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240178071 titled 'DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Simplified Explanation

The patent application is related to advanced integrated circuit structure fabrication, specifically focusing on the 10 nanometer node and smaller integrated circuit structures. The structure includes p-type and n-type semiconductor devices with metal silicide layers on the source or drain regions.

• The integrated circuit structure fabrication involves p-type and n-type semiconductor devices.
• Metal silicide layers are directly on the source or drain regions of the semiconductor devices.

Potential Applications

This technology can be applied in the manufacturing of high-performance integrated circuits for various electronic devices such as smartphones, computers, and IoT devices.

Problems Solved

This technology helps in achieving smaller node sizes and higher performance in integrated circuits, addressing the demand for faster and more efficient electronic devices.

Benefits

The use of metal silicide layers improves the conductivity and performance of the semiconductor devices, leading to enhanced overall functionality of the integrated circuits.

Potential Commercial Applications

This technology can be utilized in the semiconductor industry for the production of advanced integrated circuits, catering to the growing market for high-performance electronic devices.

Possible Prior Art

One possible prior art could be the use of metal silicide layers in semiconductor devices for improving conductivity and performance, which has been a common practice in the industry.

Unanswered Questions

== How does this technology compare to existing methods of semiconductor device fabrication? This article does not provide a direct comparison with existing methods of semiconductor device fabrication, leaving room for further analysis on the advantages and limitations of this technology.

== What are the potential challenges in scaling down the integrated circuit structures to even smaller nodes? The article does not address the potential challenges in scaling down the integrated circuit structures to smaller nodes, which could include issues related to manufacturing processes, material properties, and performance optimization.

Original Abstract Submitted

embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. in an example, an integrated circuit structure includes a p-type semiconductor device above a substrate and including first and second semiconductor source or drain regions adjacent first and second sides of a first gate electrode. a first metal silicide layer is directly on the first and second semiconductor source or drain regions. an n-type semiconductor device includes third and fourth semiconductor source or drain regions adjacent first and second sides of a second gate electrode. a second metal silicide layer is directly on the third and fourth semiconductor source or drain regions, respectively. the first metal silicide layer comprises at least one metal species not included in the second metal silicide layer.