Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Organization Name

intel corporation

Inventor(s)

Subhash M. Joshi of Hillsboro OR (US)

Jeffrey S. Leib of Beaverton OR (US)

Michael L. Hattendorf of Portland OR (US)

TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162332 titled 'TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Simplified Explanation

The patent application describes an integrated circuit structure fabrication method for 10 nanometer node and smaller structures, including a fin, gate dielectric layer, gate electrode, semiconductor source/drain regions, and trench contact structures.

• The integrated circuit structure includes a fin, gate dielectric layer, gate electrode, semiconductor source/drain regions, and trench contact structures.
• The gate dielectric layer is over the top of the fin and laterally adjacent the sidewalls of the fin.
• The gate electrode is over the gate dielectric layer and laterally adjacent the sidewalls of the fin.
• First and second semiconductor source/drain regions are adjacent the first and second sides of the gate electrode, respectively.
• First and second trench contact structures are over the first and second semiconductor source/drain regions, respectively, comprising a u-shaped metal layer and a t-shaped metal layer.

Potential Applications

This technology can be applied in the manufacturing of advanced integrated circuits for various electronic devices, such as smartphones, computers, and IoT devices.

Problems Solved

This technology solves the challenge of fabricating smaller and more efficient integrated circuit structures for high-performance electronic devices.

Benefits

The benefits of this technology include improved performance, reduced power consumption, and increased integration density in electronic devices.

Potential Commercial Applications

Potential commercial applications of this technology include semiconductor manufacturing companies, electronics manufacturers, and research institutions.

Possible Prior Art

One possible prior art for this technology could be the use of similar trench contact structures in previous integrated circuit fabrication methods.

How does this technology compare to existing methods for fabricating integrated circuit structures?

This article does not provide a direct comparison with existing methods for fabricating integrated circuit structures, leaving the reader to wonder about the specific advantages and differences.

What are the specific performance improvements achieved by this technology in comparison to traditional methods?

The article does not detail the specific performance improvements achieved by this technology compared to traditional methods, leaving a gap in understanding the potential impact of the innovation.

Original Abstract Submitted

embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. in an example, an integrated circuit structure includes a fin. a gate dielectric layer is over the top of the fin and laterally adjacent the sidewalls of the fin. a gate electrode is over the gate dielectric layer over the top of the fin and laterally adjacent the sidewalls of the fin. first and second semiconductor source or drain regions are adjacent the first and second sides of the gate electrode, respectively. first and second trench contact structures are over the first and second semiconductor source or drain regions, respectively, the first and second trench contact structures both comprising a u-shaped metal layer and a t-shaped metal layer on and over the entirety of the u-shaped metal layer.