Intel corporation (20240162289). SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES simplified abstract

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

Organization Name

intel corporation

Inventor(s)

Sean T. Ma of Portland OR (US)

Andy Chih-Hung Wei of Yamhill OR (US)

Guillaume Bouche of Portland OR (US)

SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162289 titled 'SOURCE/DRAIN REGIONS IN INTEGRATED CIRCUIT STRUCTURES

Simplified Explanation

The patent application describes source/drain regions in integrated circuit structures, along with related methods and components.

• An IC structure may include an array of channel regions, a first source/drain region proximate to the first channel region, a second source/drain region proximate to the second channel region, and an insulating material region between the first and second source/drain regions.

• • Potential Applications:**
• Semiconductor manufacturing
• Electronics industry

• • Problems Solved:**
• Improved performance and efficiency of integrated circuits
• Enhanced reliability of IC structures

• • Benefits:**
• Higher speed and lower power consumption in electronic devices
• Increased functionality and miniaturization of integrated circuits

• • Potential Commercial Applications of this Technology:**
• Mobile devices
• Computer hardware

• • Possible Prior Art:**

There may be prior art related to the use of insulating material regions between source/drain regions in integrated circuit structures to improve performance and reliability.

• • Unanswered Questions:**

1. How does the insulating material region impact the overall size of the integrated circuit structure? 2. Are there any specific manufacturing processes required to implement this technology effectively?

Original Abstract Submitted

disclosed herein are source/drain regions in integrated circuit (ic) structures, as well as related methods and components. for example, in some embodiments, an ic structure may include: an array of channel regions, including a first channel region and an adjacent second channel region; a first source/drain region proximate to the first channel region; a second source/drain region proximate to the second channel region; and an insulating material region at least partially between the first source/drain region and the second source/drain region.