Intel corporation (20240136279). INTEGRATED INDUCTOR OVER TRANSISTOR LAYER simplified abstract
Contents
- 1 INTEGRATED INDUCTOR OVER TRANSISTOR LAYER
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED INDUCTOR OVER TRANSISTOR LAYER - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED INDUCTOR OVER TRANSISTOR LAYER
Organization Name
Inventor(s)
Telesphor Kamgaing of Chandler AZ (US)
Chee Kheong Yoon of Beyan Lepas (MY)
Chu Aun Lim of Hillsboro OR (US)
Jooi Wah Wong of Bukit Mertajam (MY)
Kavitha Nagarajan of Bangalore KA (IN)
INTEGRATED INDUCTOR OVER TRANSISTOR LAYER - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240136279 titled 'INTEGRATED INDUCTOR OVER TRANSISTOR LAYER
Simplified Explanation
The integrated circuit devices described in the patent application include semiconductor devices positioned near the center of the device, with integrated inductors formed over the semiconductor devices. Power delivery to the device is on the opposite side of the semiconductor devices. The integrated inductors can be used for power step-down to reduce device thickness and/or a number of power rails.
- Semiconductor devices positioned near the center of the device
- Integrated inductors formed over the semiconductor devices
- Power delivery on the opposite side of the semiconductor devices
- Integrated inductors used for power step-down
Potential Applications
The technology described in the patent application could be applied in various fields such as:
- Consumer electronics
- Automotive industry
- Telecommunications
Problems Solved
This technology addresses the following issues:
- Reducing device thickness
- Improving power delivery efficiency
- Enhancing overall device performance
Benefits
The benefits of this technology include:
- Increased power efficiency
- Compact device design
- Enhanced reliability
Potential Commercial Applications
The technology could find commercial applications in:
- Mobile devices
- IoT devices
- Power management systems
Possible Prior Art
One possible prior art for this technology could be the integration of inductors in semiconductor devices for power management purposes.
Unanswered Questions
How does the positioning of semiconductor devices near the center of the device affect overall device performance?
The positioning of semiconductor devices near the center of the device could impact heat dissipation and signal transmission. Further research is needed to understand the implications of this design choice.
What are the potential challenges in integrating inductors over semiconductor devices?
Integrating inductors over semiconductor devices may pose challenges related to interference, manufacturing complexity, and performance optimization. Research is required to address these potential obstacles.
Original Abstract Submitted
described herein are integrated circuit devices that include semiconductor devices near the center of the device, rather than towards the top or bottom of the device, and integrated inductors formed over the semiconductor devices. power delivery to the device is on the opposite side of the semiconductor devices. the integrated inductors may be used for power step-down to reduce device thickness and/or a number of power rails.
