Intel corporation (20240120206). ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES simplified abstract
Contents
- 1 ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES
Organization Name
Inventor(s)
Muralidhar S. Ambati of Hillsboro OR (US)
Ritesh Jhaveri of Hillsboro OR (US)
Moosung Kim of Portland OR (US)
ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120206 titled 'ADVANCED ETCHING TECHNOLOGIES FOR STRAIGHT, TALL AND UNIFORM FINS ACROSS MULTIPLE FIN PITCH STRUCTURES
Simplified Explanation
The semiconductor device described in the patent application comprises high aspect ratio fins, including nested fins and isolated fins.
- The patterned hard mask used in the formation of the semiconductor device includes isolated features and nested features.
- A first substrate etching process is used to form isolated and nested fins in the substrate by transferring the pattern of the hard mask into the substrate to a certain depth.
- A second etching process is then used to etch through the substrate to a different depth.
- The first etching process utilizes an etching chemistry comprising HBr, O2, and CF4, while the second etching process utilizes an etching chemistry comprising Cl2, Ar, and CH4.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance integrated circuits and microprocessors.
Problems Solved
This technology solves the problem of forming high aspect ratio fins in semiconductor devices with precision and efficiency, allowing for improved device performance and functionality.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency in manufacturing processes, and the potential for creating smaller and more powerful semiconductor devices.
Potential Commercial Applications
The technology described in this patent application has potential commercial applications in the semiconductor industry, particularly in the production of advanced electronic devices for various applications.
Possible Prior Art
One possible prior art in this field could be the use of similar etching processes and hard mask patterns in the fabrication of semiconductor devices.
Unanswered Questions
How does the aspect ratio of the fins affect the performance of the semiconductor device?
The aspect ratio of the fins is crucial in determining the device's electrical characteristics and overall performance. Higher aspect ratios can lead to improved device performance, but how exactly this relationship works in this specific context is not addressed in the patent application.
What are the specific challenges faced in the etching processes described in the patent application?
While the patent application mentions the etching chemistries used in the processes, it does not delve into the specific challenges that may arise during these processes, such as uniformity issues, etch rate control, or other potential complications.
Original Abstract Submitted
embodiments of the invention describe semiconductor devices with high aspect ratio fins and methods for forming such devices. according to an embodiment, the semiconductor device comprises one or more nested fins and one or more isolated fins. according to an embodiment, a patterned hard mask comprising one or more isolated features and one or more nested features is formed with a hard mask etching process. a first substrate etching process forms isolated and nested fins in the substrate by transferring the pattern of the nested and isolated features of the hard mask into the substrate to a first depth. a second etching process is used to etch through the substrate to a second depth. according to embodiments of the invention, the first etching process utilizes an etching chemistry comprising hbr, oand cf, and the second etching process utilizes an etching chemistry comprising cl, ar, and ch.
