Intel corporation (20240114696). IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY simplified abstract

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

Organization Name

intel corporation

Inventor(s)

Christopher Neumann of Portland OR (US)

Cory Weinstein of Portland OR (US)

Nazila Haratipour of Portland OR (US)

Brian Doyle of Portland OR (US)

Sou-Chi Chang of Portland OR (US)

Tristan Tronic of Aloha OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Uygar Avci of Portland OR (US)

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114696 titled 'IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

Simplified Explanation

The patent application describes multiple ferroelectric capacitor structures in memory devices, including integrated circuit devices, and techniques for forming the structures.

• Insulators separate individual outer plates in a ferroelectric capacitor array and are supported between wider portions of a shared inner plate.
• Wider portions of an inner plate may be formed in lateral recesses between insulating layers.
• Ferroelectric material may be deposited over the inner plate between insulating layers after removing sacrificial layers.
• An etch-stop layer may protect the inner plate when sacrificial layers are removed.
• An etch-stop or interface layer may remain over the inner plate adjacent insulators.

Potential Applications

This technology could be applied in the manufacturing of memory devices, particularly in integrated circuit devices where multiple ferroelectric capacitor structures are needed.

Problems Solved

This technology solves the problem of efficiently forming and structuring multiple ferroelectric capacitor arrays in memory devices, improving their performance and reliability.

Benefits

The benefits of this technology include enhanced memory device performance, increased data storage capacity, and improved durability of integrated circuit devices.

Potential Commercial Applications

Potential commercial applications of this technology include the production of advanced memory devices for various electronic products, such as smartphones, computers, and other digital devices.

Possible Prior Art

One possible prior art could be the use of similar techniques in the manufacturing of memory devices, but this specific approach with wider inner plate portions and etch-stop layers may be a novel innovation.

How does this technology compare to existing methods of forming ferroelectric capacitor structures in memory devices?

This article does not provide a direct comparison to existing methods, leaving the reader to wonder about the specific advantages and disadvantages of this new approach.

What are the potential challenges or limitations of implementing this technology in mass production of memory devices?

The article does not address the potential obstacles or difficulties that may arise when scaling up this technology for mass production, leaving room for speculation on the practicality of its implementation.

Original Abstract Submitted

multiple-ferroelectric capacitor structures in memory devices, including in integrated circuit devices, and techniques for forming the structures. insulators separating individual outer plates in a ferroelectric capacitor array are supported between wider portions of a shared, inner plate. wider portions of an inner plate may be formed in lateral recesses between insulating layers. ferroelectric material may be deposited over the inner plate between insulating layers after removing sacrificial layers. an etch-stop layer may protect the inner plate when sacrificial layers are removed. an etch-stop or interface layer may remain over the inner plate adjacent insulators.