Intel corporation (20240114694). FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT simplified abstract

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

Organization Name

intel corporation

Inventor(s)

Sourav Dutta of Hillsboro OR (US)

Nazila Haratipour of Portland OR (US)

Uygar E. Avci of Portland OR (US)

Vachan Kumar of Hillsboro OR (US)

Christopher M. Neumann of Portland OR (US)

Shriram Shivaraman of Hillsboro OR (US)

Sou-Chi Chang of Portland OR (US)

Brian S. Doyle of Portland OR (US)

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114694 titled 'FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

Simplified Explanation

The patent application describes backside integrated circuit capacitor structures, where a layer of ferroelectric material is sandwiched between two electrodes. The first electrode is connected to a transistor terminal through a backside contact that is self-aligned with the source or drain region. The second electrode is connected to a backside interconnect feature. The capacitor may have multiple plates arranged in a staircase structure.

• Backside integrated circuit capacitor structures:

   - Include a layer of ferroelectric material between two electrodes.
   - First electrode connected to a transistor terminal via a backside contact.
   - Second electrode connected to a backside interconnect feature.
   - Capacitor may have multiple plates in a staircase structure.

• • Potential Applications:**

This technology can be used in non-volatile memory devices or as part of a processor cache.

• • Problems Solved:**

- Improved integration of capacitors in integrated circuits. - Enhanced performance and reliability of memory devices.

• • Benefits:**

- Increased efficiency in data storage. - Higher performance in processor caches. - Better overall reliability of integrated circuits.

• • Potential Commercial Applications of this Technology:**

Optimizing memory devices for faster data access and storage.

• • Possible Prior Art:**

Prior art may include similar capacitor structures used in memory devices or processors.

• • Unanswered Questions:**

1. How does the backside contact improve the performance of the capacitor structure? 2. What specific materials are used in the construction of the ferroelectric layer in this capacitor structure?

Original Abstract Submitted

backside integrated circuit capacitor structures. in an example, a capacitor structure includes a layer of ferroelectric material between first and second electrodes. the first electrode can be connected to a transistor terminal by a backside contact that extends downward from a bottom surface of the transistor terminal to the first electrode. the transistor terminal can be, for instance, a source or drain region, and the backside contact can be self-aligned with the source or drain region. the second electrode can be connected to a backside interconnect feature. in some cases, the capacitor has a height that extends through at least one backside interconnect layer. in some cases, the capacitor is a multi-plate capacitor in which the second conductor is one of a plurality of plate line conductors arranged in a staircase structure. the capacitor structure may be, for example, part of a non-volatile memory device or the cache of a processor.