Intel corporation (20240113118). ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT simplified abstract
Contents
- 1 ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT
Organization Name
Inventor(s)
Minwoo Jang of Portland OR (US)
Yanbin Luo of Portland OR (US)
Paul A. Packan of Hillsboro OR (US)
ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113118 titled 'ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT
Simplified Explanation
The patent application describes integrated circuit dies, apparatuses, systems, and techniques related to low and ultra-low threshold voltage transistor cells. One key innovation is the use of separate semiconductor bodies contacted by separate gate electrodes with a dielectric material in between in a first transistor cell. Another innovation is the use of separate semiconductor bodies contacted by a shared gate electrode in a second transistor cell, allowing for operation at a lower threshold voltage due to increased strain on the semiconductor bodies from the shared gate electrode.
- Separate semiconductor bodies with separate gate electrodes and dielectric material in between in a first transistor cell.
- Separate semiconductor bodies with a shared gate electrode in a second transistor cell for lower threshold voltage operation.
- Increased strain on semiconductor bodies from shared gate electrode allows for lower threshold voltage operation.
Potential Applications
The technology described in the patent application could be applied in the development of high-performance and energy-efficient integrated circuits for various electronic devices such as smartphones, tablets, and computers.
Problems Solved
This technology addresses the challenge of reducing the threshold voltage of transistor cells while maintaining performance and reliability in integrated circuits, enabling the development of more efficient and powerful electronic devices.
Benefits
The benefits of this technology include improved energy efficiency, increased performance, and enhanced reliability in integrated circuits, leading to better overall functionality and user experience in electronic devices.
Potential Commercial Applications
The technology has potential commercial applications in the semiconductor industry for the production of advanced integrated circuits for consumer electronics, telecommunications, automotive, and other high-tech sectors.
Possible Prior Art
One possible prior art could be the use of strain engineering techniques in semiconductor devices to enhance performance and reduce power consumption. Another could be the development of low threshold voltage transistor cells in integrated circuits for improved efficiency.
Unanswered Questions
== How does the shared gate electrode impact the overall performance of the integrated circuit? The shared gate electrode in the second transistor cell allows for lower threshold voltage operation due to increased strain on the semiconductor bodies. However, the exact impact on the overall performance of the integrated circuit in terms of speed, power consumption, and reliability needs further clarification.
== What are the potential challenges or limitations of implementing this technology in mass production? While the technology shows promise in reducing threshold voltage and improving performance in integrated circuits, there may be challenges or limitations in scaling up production, ensuring consistency in device performance, and addressing potential reliability issues over time. Further research and development are needed to address these aspects.
Original Abstract Submitted
integrated circuit dies, apparatuses, systems, and techniques, are described herein related to low and ultra-low threshold voltage transistor cells. a first transistor cell includes separate semiconductor bodies contacted by separate gate electrodes having a dielectric material therebetween. a second transistor cell includes separate semiconductor bodies contacted by a shared gate electrode that couples to both semiconductor bodies. transistors of the second transistor cell may be operated at a lower threshold voltage than those of the first transistor cell due to increased strain on the semiconductor bodies from the shared gate electrode.
