Intel corporation (20240113017). PLUG IN A METAL LAYER simplified abstract

PLUG IN A METAL LAYER

Organization Name

intel corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Gurpreet Singh of Beaverton OR (US)

Charles H. Wallace of Portland OR (US)

Tahir Ghani of Portland OR (US)

PLUG IN A METAL LAYER - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240113017 titled 'PLUG IN A METAL LAYER

Simplified Explanation

Embodiments described in this patent application relate to the formation of a plug within a metal layer of a semiconductor device, where the plug is created within a cavity in the metal layer. The plug extends through the metal layer into a layer below, potentially containing a dielectric and electrical routing features, and is made of an electrical insulator material. The cavity is formed by using a mask above the metal layer and etching through the metal layer, then filling it with a dielectric material. The plug is tapered and wider at the top, becoming narrower as it goes through the metal layer and reaches the layer below.

• Plug formed within a metal layer of a semiconductor device
• Plug extends through metal layer into layer below
• Cavity created through metal layer using a mask and etching process
• Plug made of electrical insulator material
• Plug is tapered and wider at the top, becoming narrower as it goes through the metal layer

Potential Applications

This technology could be applied in the semiconductor industry for the manufacturing of advanced electronic devices with improved performance and reliability.

Problems Solved

This technology solves the problem of creating plugs within metal layers of semiconductor devices, allowing for better connectivity and functionality of the devices.

Benefits

The benefits of this technology include enhanced electrical insulation, improved signal transmission, and overall better performance of semiconductor devices.

Potential Commercial Applications

Potential commercial applications of this technology could include the production of high-performance integrated circuits, microprocessors, and other electronic components.

Possible Prior Art

One possible prior art for this technology could be the use of similar plug formation techniques in the semiconductor industry, but with different materials or processes.

Unanswered Questions

How does this technology compare to existing plug formation methods in terms of efficiency and cost-effectiveness?

This article does not provide a direct comparison with existing plug formation methods in terms of efficiency and cost-effectiveness.

What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?

This article does not address the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes.

Original Abstract Submitted

embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for forming a plug within a metal layer of a semiconductor device, where the plug is formed within a cavity that is created through the metal layer. the plug may extend through the metal layer and into a layer below the metal layer, which may be a layer that includes a dielectric and one or more electrical routing features. the plug may include an electrical insulator material. the cavity may be formed by placing a mask above the metal layer and performing an etch through the metal layer subsequently filled with a dielectric, where the plug will be tapered and wider at the top of the plug and become narrower as the plug continues through the metal layer and reaches the layer below the metal layer. other embodiments may be described and/or claimed.