Intel corporation (20240105588). INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE simplified abstract
Contents
- 1 INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE
Organization Name
Inventor(s)
Ilya V. Karpov of Portland OR (US)
Shafaat Ahmed of Albuquerque NM (US)
Matthew V. Metz of Portland OR (US)
Darren Anthony Denardis of Albuquerque NM (US)
Nafees Aminul Kabir of Hillsboro OR (US)
Tristan A. Tronic of Aloha OR (US)
INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105588 titled 'INTEGRATED CIRCUIT (IC) DEVICE WITH MULTILAYER METAL LINE
Simplified Explanation
The patent application describes an IC device with a multilayer metal line surrounded by electrical insulators, formed by stacking four layers including Al and W.
- Multilayer metal line surrounded by electrical insulators
- Four layers stacked: Al core layer, W layers, conductive or dielectric layer
- Protection of Al core layer from defects
- Substrative etch to form openings for multiple metal lines
- Via formed over the third layer
Potential Applications
The technology can be applied in integrated circuits, semiconductor devices, and electronic components requiring precise metal line structures.
Problems Solved
The technology addresses issues related to defects in metal lines, ensuring reliable performance and longevity of electronic devices.
Benefits
The benefits of this technology include improved reliability, enhanced performance, and increased efficiency in electronic devices.
Potential Commercial Applications
Potential commercial applications include the semiconductor industry, electronics manufacturing, and telecommunications for high-performance electronic devices.
Possible Prior Art
Prior art may include similar patents related to multilayer metal lines, insulators, and fabrication techniques in the semiconductor industry.
Unanswered Questions
How does this technology compare to existing metal line structures in terms of performance and reliability?
The article does not provide a direct comparison with existing metal line structures in terms of performance and reliability. Further research or testing may be needed to evaluate the technology's advantages over current solutions.
What are the specific fabrication processes involved in creating the multilayer metal line structure?
The article briefly mentions substrative etch and deposition of electrical insulators, but it does not delve into the detailed fabrication processes involved in creating the multilayer metal line structure. Additional information on the specific steps and techniques used in fabrication would be beneficial for a deeper understanding of the technology.
Original Abstract Submitted
an ic device includes a multilayer metal line that is at least partially surrounded by one or more electrical insulators. the multilayer metal line may be formed by stacking four layers on top of one another. the four layers may include a first layer between a second layer and a third layer. the first layer may include al. the second or third layer may include w. the fourth layer may be a conductive or dielectric layer. the second layer, third layer, and fourth layer can protect the first layer from defects in al core layer during fabrication or operation of the multilayer metal line. substrative etch may be performed on the stack of the four layers to form openings. an electrical insulator may be deposited into to the openings to form multiple metal lines that are separated by the electrical insulator. a via may be formed over the third layer.
