Intel corporation (20240105419). ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS simplified abstract
Contents
- 1 ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the use of light-element ions like helium or neon ions compare to heavier ions in altering the operational characteristics of semiconductor devices?
- 1.11 What are the potential limitations or challenges in implementing this technology on an industrial scale?
- 1.12 Original Abstract Submitted
ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS
Organization Name
Inventor(s)
Richard H. Livengood of San Jose CA (US)
ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240105419 titled 'ALTERING OPERATIONAL CHARACTERISTICS OF A SEMICONDUCTOR DEVICE USING ACCELERATED IONS
Simplified Explanation
The patent application abstract describes a method for altering the operational characteristic of a semiconductor device by exposing specific locations within the device to a focused ion beam, with a focus on light-element ions such as helium or neon ions.
- Focused ion beam used to alter operational characteristic of semiconductor device
- Light-element ions like helium or neon ions are employed in the process
Potential Applications
The technology described in the patent application could have potential applications in the semiconductor industry for precise modification of semiconductor devices at the nanoscale level.
Problems Solved
This technology solves the problem of accurately and effectively altering the operational characteristics of semiconductor devices without causing damage to surrounding areas.
Benefits
The benefits of this technology include improved precision in modifying semiconductor devices, increased efficiency in the manufacturing process, and the ability to achieve desired operational characteristics with minimal side effects.
Potential Commercial Applications
- "Focused Ion Beam Technology for Semiconductor Device Modification"
Possible Prior Art
One possible prior art in this field is the use of electron beams for modifying semiconductor devices, which may not offer the same level of precision as the focused ion beam technology described in the patent application.
Unanswered Questions
How does the use of light-element ions like helium or neon ions compare to heavier ions in altering the operational characteristics of semiconductor devices?
The article does not provide a comparison between the use of light-element ions and heavier ions in the process of altering semiconductor devices. Further research or experimentation may be needed to determine the advantages and disadvantages of using different types of ions.
What are the potential limitations or challenges in implementing this technology on an industrial scale?
The article does not address the potential limitations or challenges that may arise when implementing this technology on a larger scale in industrial settings. Factors such as cost, scalability, and compatibility with existing manufacturing processes could be important considerations that need to be explored further.
Original Abstract Submitted
embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for altering an operational characteristic of a semiconductor device by exposing one or more locations within the semiconductor device to a focused ion beam. in embodiments, the ions in the focused ion beam may be light-element ions, which may include helium ions or neon ions. other embodiments may be described and/or claimed.
