Huawei technologies co., ltd. (20240274688). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE

Organization Name

huawei technologies co., ltd.

Inventor(s)

Zhili Zhang of Suzhou (CN)

Jin Rao of Shanghai (CN)

Tao Liu of Shanghai (CN)

Haijun Li of Suzhou (CN)

Shuiming Li of Suzhou (CN)

Ming Lu of Suzhou (CN)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240274688 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE

The present disclosure pertains to semiconductor devices, manufacturing methods, power amplification circuits, and electronic devices. One example semiconductor device includes a substrate, a channel layer, a barrier layer, a source, a gate, a drain, a backside via, and a backside conductive layer.

• Substrate, channel layer, and barrier layer are stacked on top of each other.
• Source, gate, and drain are located on the barrier layer.
• Backside via connects the substrate to the barrier layer below the source.
• Backside conductive layer covers the backside via and the back surface of the substrate.
• The source is in contact with and connected to the backside conductive layer.

Potential Applications: - This technology can be used in the manufacturing of high-performance semiconductor devices. - It can be applied in power amplification circuits for electronic devices. - The backside via and conductive layer enhance the efficiency and reliability of the semiconductor device.

Problems Solved: - Improved connectivity between the source and backside conductive layer. - Enhanced performance and stability of power amplification circuits. - Simplified manufacturing processes for semiconductor devices.

Benefits: - Increased efficiency and reliability of electronic devices. - Enhanced performance of power amplification circuits. - Cost-effective manufacturing methods for semiconductor devices.

Commercial Applications: - This technology can be utilized in the production of smartphones, tablets, and other consumer electronics. - It can also be integrated into communication devices, amplifiers, and signal processing equipment.

Questions about the technology: 1. How does the backside conductive layer improve the performance of the semiconductor device? 2. What are the advantages of having a backside via in the manufacturing process?

Frequently Updated Research: - Stay updated on advancements in semiconductor manufacturing techniques. - Monitor developments in power amplification circuit design for electronic devices.

Original Abstract Submitted

the present disclosure relates to semiconductor devices, manufacturing methods, a power amplification circuits, and electronic devices. one example semiconductor device includes a substrate, a channel layer and a barrier layer sequentially disposed on the substrate in a stacked manner, a source, a gate, and a drain disposed on the barrier layer, a backside via through a region from the substrate to the barrier layer below the source, and a backside conductive layer covering the backside via and a back surface of the substrate, where the source is in contact with and connected to the backside conductive layer.