Huawei technologies co., ltd. (20240206189). FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract
Contents
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
Organization Name
Inventor(s)
JEFFREY JUNHAO Xu of Shenzhen (CN)
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240206189 titled 'FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
The abstract describes a ferroelectric memory with memory cells containing ferroelectric capacitors, each consisting of a first electrode, a second electrode, and a ferroelectric layer in between. Additionally, there are isolation passivation layers on either side of the ferroelectric layer to prevent oxygen diffusion to the electrodes.
- Ferroelectric memory with memory cells and ferroelectric capacitors
- Each capacitor has a first electrode, a second electrode, and a ferroelectric layer
- Isolation passivation layers on either side of the ferroelectric layer prevent oxygen diffusion
- Designed to improve the performance and reliability of the memory cells
- Addresses issues related to oxygen diffusion in ferroelectric capacitors
Potential Applications: - Non-volatile memory storage - Embedded memory in integrated circuits - High-speed data processing applications
Problems Solved: - Oxygen diffusion in ferroelectric capacitors - Enhancing memory cell performance and reliability
Benefits: - Improved memory cell stability - Enhanced data retention capabilities - Higher efficiency in data processing applications
Commercial Applications: Title: Advanced Ferroelectric Memory Technology for High-Speed Data Processing This technology can be utilized in: - Consumer electronics - Automotive systems - Industrial automation
Questions about Ferroelectric Memory Technology: 1. How does the presence of isolation passivation layers impact the performance of ferroelectric memory cells?
The isolation passivation layers prevent oxygen diffusion, improving the stability and reliability of the memory cells.
2. What are the key advantages of using ferroelectric memory in comparison to other types of memory technologies?
Ferroelectric memory offers non-volatile storage, high-speed data processing, and enhanced data retention capabilities.
Original Abstract Submitted
a ferroelectric memory includes a substrate and a plurality of memory cells formed on the substrate. each memory cell includes a ferroelectric capacitor. the ferroelectric capacitor includes a first electrode and a second electrode, and a ferroelectric layer formed between the first electrode and the second electrode. the ferroelectric capacitor further includes a first isolation passivation layer formed between the first electrode and the ferroelectric layer, and a second isolation passivation layer formed between the second electrode and the ferroelectric layer. the first isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the first electrode, and the second isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the second electrode.
