Huawei technologies co., ltd. (20240113186). Trench FET Device and Method of Manufacturing Trench FET Device simplified abstract
Contents
- 1 Trench FET Device and Method of Manufacturing Trench FET Device
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Trench FET Device and Method of Manufacturing Trench FET Device - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Trench FET Device and Method of Manufacturing Trench FET Device
Organization Name
Inventor(s)
Mo huai Chang of Nuremberg (DE)
Trench FET Device and Method of Manufacturing Trench FET Device - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240113186 titled 'Trench FET Device and Method of Manufacturing Trench FET Device
Simplified Explanation
The abstract describes a trench field-effect transistor (FET) device with active trenches containing gate and shield electrodes, as well as termination trenches filled with dielectric material.
- The trench FET device has active trenches with gate and shield electrodes.
- Termination trenches are filled with dielectric material and are adjacent to the active trenches.
- The shield electrode of each active trench abuts a termination trench at each end.
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Power electronics
- Renewable energy systems
- Electric vehicles
Problems Solved
The trench FET device addresses the following issues:
- Improved performance and efficiency in power electronics
- Enhanced reliability and durability in high-power applications
Benefits
The benefits of this technology include:
- Higher power density
- Lower on-state resistance
- Reduced switching losses
Potential Commercial Applications
The technology has potential commercial applications in:
- Power inverters
- Motor drives
- Solar inverters
Possible Prior Art
One possible prior art for this technology could be the use of trench FET devices in power electronics applications.
Unanswered Questions
How does this technology compare to traditional power transistors in terms of efficiency and performance?
The article does not provide a direct comparison between this technology and traditional power transistors. Further research or testing may be needed to determine the specific advantages of the trench FET device.
What are the potential challenges in scaling up the production of trench FET devices for mass commercial use?
The article does not address the scalability of production for mass commercial use. Factors such as cost, manufacturing processes, and supply chain logistics could present challenges that need to be explored further.
Original Abstract Submitted
a trench field-effect transistor (fet) device includes a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis. each active trench includes a gate electrode and a shield electrode. the trench fet device further includes a plurality of termination trenches fully filled with a dielectric material, extending along the second axis, and arranged adjacent to the active trenches. in addition, the shield electrode of each of the active trenches abuts a respective one of the plurality of termination trenches at each end.
