Google llc (20240192606). TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY simplified abstract
TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY
Organization Name
Inventor(s)
Joseph Daniel Lowney of Tucson AZ (US)
Thomas Mercier of Weston FL (US)
TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240192606 titled 'TWO-DIMENSIONAL (2D) PATTERNS USING MULTIPLE EXPOSURES OF ONE-DIMENSIONAL (1D) PHOTOLITHOGRAPHY MASKS OR HOLOGRAPHIC INTERFERENCE LITHOGRAPHY
Simplified Explanation: The patent application describes a method for creating a two-dimensional pattern on a photoresist layer using two separate exposures with alternating illumination intensity along different dimensions.
- The photoresist layer is first exposed to a unidimensional series of features that provide alternating minima and maxima of illumination intensity along one dimension.
- Then, the photoresist layer is exposed to a second unidimensional series of features that provide alternating minima and maxima of illumination intensity along a different dimension, which is angularly separated from the first dimension by an exposure rotation factor.
Key Features and Innovation:
- Utilizes two exposures with alternating illumination intensity to create a two-dimensional pattern.
- Allows for precise control over the pattern created on the photoresist layer.
- Enables the creation of complex patterns with high resolution.
Potential Applications: This technology can be used in the semiconductor industry for photolithography processes to create intricate patterns on semiconductor wafers.
Problems Solved:
- Provides a method for generating two-dimensional patterns with high precision.
- Offers a solution for creating complex patterns on photoresist layers.
Benefits:
- Improved control over pattern creation.
- Enhanced resolution in pattern generation.
- Increased efficiency in semiconductor manufacturing processes.
Commercial Applications: Potential commercial applications include semiconductor manufacturing, microelectronics production, and other industries requiring precise patterning on surfaces.
Prior Art: There may be prior art related to multi-exposure techniques in photolithography processes that could provide additional insights into similar methods.
Frequently Updated Research: Stay updated on advancements in photolithography techniques, semiconductor manufacturing processes, and nanotechnology developments for potential improvements in pattern generation methods.
Questions about Two-Dimensional Pattern Generation: 1. How does the alternating illumination intensity in the two exposures contribute to the creation of complex patterns? 2. What are the potential limitations of using exposure rotation factors in generating two-dimensional patterns?
Original Abstract Submitted
systems and methods are provided for generating a two-dimensional pattern on a photoresist layer. a photoresist layer is exposed via a first exposure to a first unidimensional series of features alternatingly providing first minima and maxima of illumination intensity along a first dimension. the photoresist layer is then exposed via a second exposure to a second unidimensional series of features alternatingly providing second minima and maxima of illumination intensity along a second dimension that is angularly separated from the second dimension by an exposure rotation factor.
