GlobalFoundries U.S. Inc. patent applications published on July 25th, 2024
Summary of the patent applications from GlobalFoundries U.S. Inc. on July 25th, 2024
1. Summary: GlobalFoundries U.S. Inc. has recently filed patents related to innovative semiconductor structures and technologies. These patents focus on enhancing the performance and efficiency of semiconductor devices through the use of advanced features such as lateral bipolar transistors, heater terminal contacts, field-effect transistors with wide bandgap materials, and semiconductor structures with porous semiconductor material. The organization aims to improve power management systems, semiconductor manufacturing, and integrated circuits with these cutting-edge technologies.
2. Key Points of Patents:
- Lateral bipolar transistor structure with extrinsic base region, emitter region, collector region, and gate structure.
- Heterojunction bipolar transistor with heater terminal contacts for improved performance.
- Field-effect transistor structure with wide bandgap semiconductor material and gate structure.
- Semiconductor structure with porous semiconductor material for enhanced breakdown voltage and transconductance.
3. Notable Applications:
- Power electronics, high-frequency applications, and RF amplifiers benefit from these advanced semiconductor technologies.
- Industries such as telecommunications, aerospace, automotive, and renewable energy can leverage these patents for improved device performance and efficiency.
Contents
- 1 Patent applications for GlobalFoundries U.S. Inc. on July 25th, 2024
- 1.1 HEATER ELEMENTS (18099389)
- 1.2 SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE (18157939)
- 1.3 FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL (18098999)
- 1.4 HEATER TERMINAL CONTACTS (18099366)
- 1.5 LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSIC BASE (18438882)
Patent applications for GlobalFoundries U.S. Inc. on July 25th, 2024
HEATER ELEMENTS (18099389)
Main Inventor
Uppili S. RAGHUNATHAN
SEMICONDUCTOR DEVICE INCLUDING POROUS SEMICONDUCTOR MATERIAL ADJACENT AN ISOLATION STRUCTURE (18157939)
Main Inventor
Shesh Mani Pandey
FIELD-EFFECT TRANSISTORS FORMED USING A WIDE BANDGAP SEMICONDUCTOR MATERIAL (18098999)
Main Inventor
Francois Hebert
HEATER TERMINAL CONTACTS (18099366)
Main Inventor
Uppili S. RAGHUNATHAN
LATERAL BIPOLAR TRANSISTORS WITH GATE STRUCTURE ALIGNED TO EXTRINSIC BASE (18438882)
Main Inventor
Judson R. Holt
