Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors: abstract simplified (18207905)

• This abstract for appeared for patent application number 18207905 Titled 'Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors'

Simplified Explanation

The abstract describes a type of transistor called a ferroelectric transistor. This transistor has two electrodes, with one electrode positioned slightly away from the other. In between the electrodes, there is an active region. Within this active region, there is a transistor gate, which controls the flow of current. The active region also contains a source/drain region next to each electrode, and a body region in between. The body region includes a channel region next to the transistor gate. In addition, there is a barrier between the second electrode and the channel region that allows electrons to pass through but not holes. Finally, there is a ferroelectric material located between the transistor gate and the channel region.

Original Abstract Submitted

Some embodiments include a ferroelectric transistor having a first electrode and a second electrode. The second electrode is offset from the first electrode by an active region. A transistor gate is along a portion of the active region. The active region includes a first source/drain region adjacent the first electrode, a second source/drain region adjacent the second electrode, and a body region between the first and second source/drain regions. The body region includes a gated channel region adjacent the transistor gate. The active region includes at least one barrier between the second electrode and the gated channel region which is permeable to electrons but not to holes. Ferroelectric material is between the transistor gate and the gated channel region.