ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME: abstract simplified (18332972)

• This abstract for appeared for patent application number 18332972 Titled 'ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME'

Simplified Explanation

The abstract describes an electronic device and a method of manufacturing it. The device consists of two separate regions on a substrate, each containing a different device. The first device has a layer with a ferroelectric domain and a gate electrode, while the second device also has a layer with a ferroelectric domain and a gate electrode. The two domain layers have different characteristics when it comes to polarization change caused by an electric field. The first domain layer exhibits a non-hysteretic behavior, meaning it does not retain any memory of its previous state, while the second domain layer exhibits a hysteretic behavior, meaning it retains memory of its previous state.

Original Abstract Submitted

Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.