Denso corporation (20240316824). WAFER PRODUCTION METHOD simplified abstract
Contents
WAFER PRODUCTION METHOD
Organization Name
Inventor(s)
Koichiro Yasuda of Kariya-city (JP)
Ryota Takagi of Kariya-city (JP)
Tomoki Kawazu of Kariya-city (JP)
Sodai Nomura of Kariya-city (JP)
Hideaki Shirai of Kariya-city (JP)
Bahman Soltani of Kariya-city (JP)
Shunsuke Sobajima of Kariya-city (JP)
WAFER PRODUCTION METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240316824 titled 'WAFER PRODUCTION METHOD
The patent application describes a method for producing wafers from an ingot with a c-axis inclined in an off-angle direction.
- Emit a laser beam to the top surface of the ingot to create a separation layer at the desired wafer thickness.
- Apply a physical load to remove a wafer precursor from the ingot.
- Planarize the surface of the removed object to form a wafer.
- The ingot has a certain degree of transmittance to the laser beam.
- The wafer precursor is created between the top surface of the ingot and the separation layer.
Potential Applications: - Semiconductor industry for wafer production - Solar panel manufacturing - Microelectronics fabrication
Problems Solved: - Efficient wafer production from oriented ingots - Precise control over wafer thickness - Reduction of material waste in the manufacturing process
Benefits: - Improved yield in wafer production - Enhanced quality control in semiconductor manufacturing - Cost-effective production process
Commercial Applications: Title: Advanced Wafer Production Method for Semiconductor Industry This technology can revolutionize the semiconductor industry by streamlining wafer production processes, reducing material waste, and improving overall efficiency. The market implications include increased competitiveness for companies adopting this innovative method.
Questions about the technology: 1. How does this method compare to traditional wafer production techniques? This method offers greater precision and control over wafer thickness compared to traditional methods, leading to higher quality wafers. 2. What are the potential cost savings for companies implementing this technology? Companies can save on material costs and increase production efficiency, resulting in significant cost savings over time.
Original Abstract Submitted
a wafer production method for producing a wafer from an ingot oriented to have a c-axis inclined in an off-angle direction at an off-angle more than zero degree from a central axis includes steps of emitting a laser beam to a top surface that is one of end surfaces of the ingot opposed to each other in height direction thereof to form a separation layer at a depth from the top surface of the ingot which corresponds to a thickness of the wafer, applying a physical load in a single direction to a first end that is one of ends of the ingot which are opposed to each other in an off-angle direction to remove a wafer precursor from the ingot at the separation layer, and planarizing a major surface of a removed object derived by separating the wafer precursor from the ingot at the separation layer, thereby forming a wafer. the ingot has a given degree of transmittance to the laser beam. the wafer precursor is created by a portion of the ingot between the top surface of the ingot and the separation layer.
