Denso corporation (20240297212). SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Naoki Tega of Kariya-city (JP)
Yuichiro Matsuura of Kariya-city (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240297212 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a semiconductor substrate with trenches arranged in intersecting directions, a gate insulating film, and a gate electrode. The substrate also features various regions such as source, body, drift, bottom, electric field relaxation, and contact regions.
- Overlapping ranges exist where inter-trench semiconductor regions and electric field relaxation regions overlap, including contact overlapping ranges with contact regions and non-contact overlapping ranges without contact regions.
- The contact overlapping ranges and non-contact overlapping ranges are alternately arranged in the first direction.
Potential Applications: - Power electronics - Semiconductor manufacturing - Integrated circuits
Problems Solved: - Enhanced performance and efficiency of semiconductor devices - Improved control of electric fields within the device
Benefits: - Increased reliability and stability - Higher power handling capabilities - Better overall device performance
Commercial Applications: Title: "Advanced Semiconductor Devices for Enhanced Power Handling" This technology can be utilized in industries such as power electronics, automotive electronics, and renewable energy systems. The improved efficiency and performance of these semiconductor devices can lead to cost savings and enhanced product capabilities in various commercial applications.
Questions about the technology: 1. How does the arrangement of overlapping ranges in the semiconductor device contribute to its overall performance? 2. What specific advantages do the contact overlapping ranges provide in terms of device functionality and reliability?
Frequently Updated Research: Researchers are continually exploring ways to optimize the design and materials used in semiconductor devices to further improve their performance and efficiency. Stay updated on the latest advancements in this field to ensure you are utilizing the most cutting-edge technology available.
Original Abstract Submitted
a semiconductor device includes a semiconductor substrate, trenches extending in a first direction and arranged at intervals in a second direction intersecting the first direction, a gate insulating film, and a gate electrode. the semiconductor substrate includes a source region, a body region, a drift region, bottom regions, electric field relaxation regions, and contact regions. there are overlapping ranges in which each of inter-trench semiconductor regions and each of the electric field relaxation regions overlap each other, the overlapping ranges include contact overlapping ranges in which the contact regions are disposed and non-contact overlapping ranges in which the contact regions are not disposed, and the contact overlapping ranges and the non-contact overlapping ranges are alternately arranged in the first direction.
