Category:Yu-Ming Lin

Yu-Ming Lin

Executive Summary

Yu-Ming Lin is an inventor who has filed 19 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (6 patents), ELECTRONIC MEMORY DEVICES (6 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (5 patents), and they have worked with companies such as Taiwan Semiconductor Manufacturing Company, Ltd. (19 patents). Their most frequent collaborators include (8 collaborations), (8 collaborations), (6 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 6 patents
• H10B51/20 (ELECTRONIC MEMORY DEVICES): 6 patents
• H01L29/78391 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
• H10B51/30 (ELECTRONIC MEMORY DEVICES): 5 patents
• H01L29/66742 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
• H01L29/516 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
• H01L27/1159 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
• H01L29/6684 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
• H10B51/10 (ELECTRONIC MEMORY DEVICES): 3 patents
• H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/7869 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L23/5283 ({Geometry or} layout of the interconnection structure {(): 2 patents
• H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/40111 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• G11C11/2257 ({Word-line or row circuits}): 2 patents
• H10B51/40 (ELECTRONIC MEMORY DEVICES): 2 patents
• H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/42384 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H10B53/40 (ELECTRONIC MEMORY DEVICES): 1 patents
• H01L27/11514 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/823418 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/02565 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/383 (Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions): 1 patents
• H01L21/425 (producing ion implantation): 1 patents
• H01L21/477 (Organic layers, e.g. photoresist (): 1 patents
• H01L29/24 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/11597 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/11587 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/41775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/4908 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/02178 ({the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (): 1 patents
• H01L21/02194 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/0228 ({deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD}): 1 patents
• H01L29/66969 ({of devices having semiconductor bodies not comprising group 14 or group 13/15 materials (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide): 1 patents
• H10B53/00 (Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors): 1 patents
• G11C5/06 (STATIC STORES (semiconductor memory devices): 1 patents
• G11C11/221 ({using ferroelectric capacitors}): 1 patents
• H10B51/00 (Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors): 1 patents
• H10B63/34 (ELECTRONIC MEMORY DEVICES): 1 patents
• G11C7/18 (STATIC STORES (semiconductor memory devices): 1 patents
• G11C8/14 (Word line organisation; Word line lay-out): 1 patents
• H10N70/061 (No explanation available): 1 patents
• H10N70/253 (No explanation available): 1 patents
• H10N70/8265 (No explanation available): 1 patents
• H10N70/841 (No explanation available): 1 patents
• H01L29/66666 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• G11C11/2255 ({Bit-line or column circuits}): 1 patents
• H01L29/78603 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L27/0705 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/76802 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
• H01L21/0332 (comprising inorganic layers): 1 patents
• H01L21/0337 ({characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}): 1 patents
• H01L21/31111 ({by chemical means}): 1 patents
• H01L21/31144 ({using masks}): 1 patents
• H01L21/76877 ({Thin films associated with contacts of capacitors}): 1 patents
• H01L21/823437 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L21/823475 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
• H01L23/53295 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• G11C11/223 ({using MOS with ferroelectric gate insulating film}): 1 patents
• G11C11/2275 ({Writing or programming circuits or methods}): 1 patents
• H10B43/30 (ELECTRONIC MEMORY DEVICES): 1 patents
• H10B43/40 (ELECTRONIC MEMORY DEVICES): 1 patents
• H10B43/50 (ELECTRONIC MEMORY DEVICES): 1 patents
• H10B51/50 (ELECTRONIC MEMORY DEVICES): 1 patents

Companies

List of Companies

• Taiwan Semiconductor Manufacturing Company, Ltd.: 19 patents

Collaborators

• Chung-Te Lin (8 collaborations)
• Sai-Hooi Yeong (8 collaborations)
• Hai-Ching Chen (6 collaborations)
• Han-Jong Chia (5 collaborations)
• Wu-Wei Tsai (5 collaborations)
• Bo-Feng Young (4 collaborations)
• Po-Ting Lin (4 collaborations)
• Chao-I Wu (4 collaborations)
• Yu-Ming Hsiang (3 collaborations)
• Yan-Yi Chen (3 collaborations)
• Chih-Yu Chang (2 collaborations)
• Kai-Wen Cheng (2 collaborations)
• Wei-Chih Wen (2 collaborations)
• Cheng-Chi Chuang (2 collaborations)
• Chih-Hao Wang (2 collaborations)
• Li-Zhen Yu (2 collaborations)
• Chun-Chieh Lu (2 collaborations)
• Meng-Han Lin (2 collaborations)
• Yi-Ching Liu (2 collaborations)
• Yi-Cheng Chu (1 collaborations)
• Chien-Hua Huang (1 collaborations)
• Han-Ting Tsai (1 collaborations)
• Ya-Ling Lee (1 collaborations)
• Shih-Chuan Chiu (1 collaborations)
• Chia-Hao Chang (1 collaborations)
• Huan-Chieh Su (1 collaborations)
• Chun-Yuan Chen (1 collaborations)
• Po-Tsun Liu (1 collaborations)
• Zhen-Hao Li (1 collaborations)
• Tsung-Che Chiang (1 collaborations)
• Hsin-Yi Huang (1 collaborations)
• Yin-Hao Wu (1 collaborations)
• Kuo-Chang Chiang (1 collaborations)
• Yu-Chuan Shih (1 collaborations)
• Lin-Yu Huang (1 collaborations)
• Wen-Ling Lu (1 collaborations)
• Chen-Jun Wu (1 collaborations)
• Ya-Yun Cheng (1 collaborations)
• Sheng-Chih Lai (1 collaborations)
• Feng-Cheng Yang (1 collaborations)
• Yih Wang (1 collaborations)