Category:Tirunelveli Subramaniam Ravi of San Jose CA (US)

Tirunelveli Subramaniam Ravi of San Jose CA (US)

Executive Summary

Tirunelveli Subramaniam Ravi of San Jose CA (US) is an inventor who has filed 6 patents. Their primary areas of innovation include SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, (2 patents), with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies (2 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (2 patents), and they have worked with companies such as ThinSiC Inc. (3 patents), ThinSiC Inc (2 patents), ThinSIC Inc (1 patents). Their most frequent collaborators include (2 collaborations), (2 collaborations), (1 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• C30B25/12 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 2 patents
• H01L21/7813 (with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies): 2 patents
• H01L29/1608 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/872 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L21/02378 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• H01L29/6606 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
• C30B29/36 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 2 patents
• H01L23/544 (Marks applied to semiconductor devices {or parts}, e.g. registration marks, {alignment structures, wafer maps (test patterns for characterising or monitoring manufacturing processes): 1 patents
• H01L21/2636 (with high-energy radiation (): 1 patents
• H01L21/78 (with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies): 1 patents
• H01L21/68757 (using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks): 1 patents
• B08B7/0035 ({by radiant energy, e.g. UV, laser, light beam or the like}): 1 patents
• B08B7/0042 ({by laser}): 1 patents
• B08B7/04 (CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL (brushes): 1 patents
• H01L21/02532 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/0243 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/02529 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• C30B33/02 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 1 patents
• C30B25/04 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 1 patents
• C30B25/20 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 1 patents
• H01L21/02019 ({Chemical etching}): 1 patents
• H01L21/02389 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L21/02271 ({deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (): 1 patents
• C23C16/325 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C23C16/4412 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C23C16/45504 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C23C16/4587 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C23C16/46 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
• C30B25/10 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 1 patents
• C30B25/14 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds,): 1 patents
• H01L21/68771 (using mechanical means, e.g. chucks, clamps or pinches {(using elecrostatic chucks): 1 patents

Companies

List of Companies

• ThinSiC Inc.: 3 patents
• ThinSiC Inc: 2 patents
• ThinSIC Inc: 1 patents

Collaborators

• Stephen Daniel Miller of San Jose CA (US) (2 collaborations)
• Jinho Seo of Saratoga CA (US) (2 collaborations)
• Ashraf Ahmed El dakrouri of Santa Clara CA (US) (1 collaborations)
• Ashraf Ahmed Eldakrouri of Santa Clara CA (US) (1 collaborations)
• Hoeseok Lee of San Jose CA (US) (1 collaborations)
• Bishnu Prasanna Gogoi of Scottsdale AZ (US) (1 collaborations)
• Jeffrey Scott Pietkiewicz of San Jose CA (US) (1 collaborations)
• Kelly Marie Moyers of Santa Clara CA (US) (1 collaborations)
• Bishnu Gogoi of Scottsdale AZ (US) (1 collaborations)