Category:Naoki KOBAYASHI

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Naoki KOBAYASHI

Executive Summary

Naoki KOBAYASHI is an inventor who has filed 7 patents. Their primary areas of innovation include having cover layers or intermediate layers, e.g. subbing layers {( (5 patents), characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general (4 patents), {characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment} (3 patents), and they have worked with companies such as SHIN-ETSU CHEMICAL CO., LTD. (7 patents). Their most frequent collaborators include (5 collaborations), (2 collaborations), (2 collaborations).

Patent Filing Activity

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Technology Areas

Naoki KOBAYASHI Top Technology Areas.png

List of Technology Areas

  • G03F7/11 (having cover layers or intermediate layers, e.g. subbing layers {(): 5 patents
  • G03F7/094 (characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general): 4 patents
  • H01L21/3086 ({characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}): 3 patents
  • C23C16/042 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 2 patents
  • H01L21/0274 (Making masks on semiconductor bodies for further photolithographic processing not provided for in group): 2 patents
  • H01L21/0276 ({using an anti-reflective coating (anti-reflective coating for lithography in general): 2 patents
  • H01L21/0337 ({characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment}): 2 patents
  • H01L21/31144 ({using masks}): 2 patents
  • H01L21/3081 (using masks (): 2 patents
  • H01L21/3065 (Plasma etching; Reactive-ion etching): 2 patents
  • C07F7/2224 (ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins): 1 patents
  • C23C16/45553 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion): 1 patents
  • G03F7/0042 ({with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (): 1 patents
  • C07F7/00 (Compounds containing elements of Groups 4 or 14 of the Periodic Table): 1 patents
  • C07F7/28 (ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins): 1 patents
  • G03F7/0757 ({Macromolecular compounds containing Si-O, Si-C or Si-N bonds (): 1 patents
  • C09D1/00 (Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances): 1 patents
  • C09D185/00 (Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon; Coating compositions based on derivatives of such polymers): 1 patents
  • H01L21/31116 ({by dry-etching}): 1 patents
  • G03F7/0041 ({providing an etching agent upon exposure (): 1 patents
  • G03F7/162 (Coating processes; Apparatus therefor (applying coatings to base materials in general): 1 patents
  • H01L21/0275 (Making masks on semiconductor bodies for further photolithographic processing not provided for in group): 1 patents
  • H01L21/0332 (comprising inorganic layers): 1 patents
  • H01L21/02178 ({the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (): 1 patents
  • H01L21/02181 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L21/02186 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L21/02189 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
  • H01L21/02255 ({formation by thermal treatment (): 1 patents
  • H01L21/31056 ({the removal being a selective chemical etching step, e.g. selective dry etching through a mask}): 1 patents
  • H01L21/31122 (to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers): 1 patents
  • H01L21/31138 (to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (encapsulating layers): 1 patents

Companies

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List of Companies

  • SHIN-ETSU CHEMICAL CO., LTD.: 7 patents

Collaborators

Subcategories

This category has the following 2 subcategories, out of 2 total.

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