Category:Mark I. Gardner of Albany NY (US)
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Mark I. Gardner of Albany NY (US)
Executive Summary
Mark I. Gardner of Albany NY (US) is an inventor who has filed 13 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (8 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (7 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (6 patents), and they have worked with companies such as Tokyo Electron Limited (13 patents). Their most frequent collaborators include (13 collaborations), (2 collaborations).
Patent Filing Activity
Technology Areas
List of Technology Areas
- H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 8 patents
- H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 7 patents
- H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 6 patents
- H01L29/66439 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 6 patents
- H01L27/092 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L21/02603 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L21/823807 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 4 patents
- H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L21/823814 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 4 patents
- H01L21/02532 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 3 patents
- H01L29/66553 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 3 patents
- H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L29/66795 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L29/1033 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L29/1037 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/7855 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/02565 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/8256 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/66969 ({of devices having semiconductor bodies not comprising group 14 or group 13/15 materials (comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide): 1 patents
- H01L21/2236 (using diffusion into or out of a solid from or into a gaseous phase {(): 1 patents
- H01L29/1095 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/42364 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/823864 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/6653 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
- H01L29/6656 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 1 patents
- H01L29/78651 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/78684 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/785 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/0665 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/517 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/823828 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L21/823878 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/66742 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/0649 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/7848 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/4966 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/28088 (Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups): 1 patents
- H01L21/30604 (Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers): 1 patents
- H01L23/481 (Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor}): 1 patents
- H01L27/0886 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/7851 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
Companies
List of Companies
- Tokyo Electron Limited: 13 patents
Collaborators
- H. Jim Fulford of Albany NY (US) (13 collaborations)
- Partha Mukhopadhyay of Albany NY (US) (2 collaborations)
Subcategories
This category has the following 2 subcategories, out of 2 total.
Pages in category "Mark I. Gardner of Albany NY (US)"
The following 4 pages are in this category, out of 4 total.
1
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17962235. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Tokyo Electron Limited)