Category:Huanshao KUO

Huanshao KUO

Executive Summary

Huanshao KUO is an inventor who has filed 9 patents. Their primary areas of innovation include Roughened surfaces, e.g. at the interface between epitaxial layers (4 patents), {the electrode extending at least partially onto a side surface of the semiconductor body} (2 patents), {characterised by the doping materials} (2 patents), and they have worked with companies such as Tianjin Sanan Optoelectronics Co., Ltd. (5 patents), TIANJIN SANAN OPTOELECTRONICS CO., LTD. (4 patents). Their most frequent collaborators include (5 collaborations), (3 collaborations), (3 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

• H01L33/22 (Roughened surfaces, e.g. at the interface between epitaxial layers): 4 patents
• H01L33/385 ({the electrode extending at least partially onto a side surface of the semiconductor body}): 2 patents
• H01L33/305 ({characterised by the doping materials}): 2 patents
• H01L25/0753 (the devices being of a type provided for in group): 2 patents
• H01L33/10 (with a light reflecting structure, e.g. semiconductor Bragg reflector): 2 patents
• H01L33/40 (Materials therefor): 2 patents
• H01L33/62 (Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls): 2 patents
• H01L27/156 (including semiconductor components having potential barriers, specially adapted for light emission): 1 patents
• H01L33/36 (characterised by the electrodes): 1 patents
• H01L2933/0033 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
• H01L33/405 ({Reflective materials}): 1 patents
• H01L33/30 (containing only elements of Group III and Group V of the Periodic Table): 1 patents
• H01L33/387 ({with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer}): 1 patents
• H01L33/06 (within the light emitting region, e.g. quantum confinement structure or tunnel barrier): 1 patents
• H01L33/24 (of the light emitting region, e.g. non-planar junction): 1 patents
• H01L33/0075 ({comprising nitride compounds}): 1 patents
• H01L33/0093 ({Wafer bonding; Removal of the growth substrate}): 1 patents

Companies

List of Companies

• Tianjin Sanan Optoelectronics Co., Ltd.: 5 patents
• TIANJIN SANAN OPTOELECTRONICS CO., LTD.: 4 patents

Collaborators

• Yuren PENG (5 collaborations)
• Duxiang WANG (3 collaborations)
• Yu-Ren PENG (3 collaborations)
• Zhiwei WU (3 collaborations)
• Weiping XIONG (3 collaborations)
• Weifan KE (2 collaborations)
• Jinghua CHEN (2 collaborations)
• Yenchin WANG (2 collaborations)
• Yanyun WANG (2 collaborations)
• Di GAO (2 collaborations)
• Yuehua JIA (1 collaborations)
• Rongyan GUO (1 collaborations)
• Jiayu LIU (1 collaborations)
• Shengnan LIU (1 collaborations)
• Pengjie HU (1 collaborations)
• Qiaotian WU (1 collaborations)
• Liping CHOU (1 collaborations)
• Chincheng HSU (1 collaborations)
• Shaohua HUANG (1 collaborations)
• Weihuan LI (1 collaborations)
• JInghua CHEN (1 collaborations)
• Peng GAO (1 collaborations)
• Fuyang NING (1 collaborations)
• Xiaofeng LIU (1 collaborations)
• Chia-Hung CHANG (1 collaborations)
• Shutian QIU (1 collaborations)
• Chong XU (1 collaborations)
• Shasha CHEN (1 collaborations)
• Kunte LIN (1 collaborations)
• Kaiqing XU (1 collaborations)
• Shihchieh HOU (1 collaborations)
• Shao-Hua HUANG (1 collaborations)
• Liguo ZHANG (1 collaborations)
• Taotao YIN (1 collaborations)
• Jin WANG (1 collaborations)