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Category:Heng Wu of Santa Clara CA (US)
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Pages in category "Heng Wu of Santa Clara CA (US)"
The following 23 pages are in this category, out of 23 total.
1
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808360. SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED PFET AND BOTTOM DIELECTRIC ISOLATION NFET simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809184. ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837150. UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931464. MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932347. VERTICAL NAND WITH BACKSIDE STACKING simplified abstract (International Business Machines Corporation)
- 17941248. CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17949579. SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract (International Business Machines Corporation)
- 18059672. THREE DIMENSIONAL RERAM DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18065117. EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 18093932. CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERTICAL FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240096699). SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract
- International business machines corporation (20240096887). MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract
- International business machines corporation (20240098961). SRAM with Improved Program and Sensing Margin for Scaled Nanosheet Devices simplified abstract
- International business machines corporation (20240099011). VERTICAL NAND WITH BACKSIDE STACKING simplified abstract
- International business machines corporation (20240105609). HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR simplified abstract
- International business machines corporation (20240128333). DIRECT BACKSIDE SELF-ALIGNED CONTACT simplified abstract
- International business machines corporation (20240128346). GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS simplified abstract
- International business machines corporation (20240179924). THREE DIMENSIONAL RERAM DEVICE simplified abstract
- International business machines corporation (20240196627). EMBEDDED ReRAM WITH BACKSIDE CONTACT simplified abstract