There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:H03F1/30
Jump to navigation
Jump to search
Pages in category "H03F1/30"
The following 12 pages are in this category, out of 12 total.
1
- 17987751. LOW-POWER LOW-VOLTAGE DIFFERENTIAL SIGNALING RECEIVER WITH SIGNAL DISTORTION CORRECTION simplified abstract (QUALCOMM Incorporated)
- 18221128. DIFFERENTIAL SIGNALING CIRCUIT FOR CORRECTING FOR DUTY CHANGE DUE TO NBTI DEGRADATION, OPERATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18369943. RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER simplified abstract (Samsung Electronics Co., Ltd.)
- 18453865. INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18522321. COMPENSATION OF THERMALLY INDUCED VOLTAGE ERRORS simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Q
S
- Samsung electronics co., ltd. (20240097622). RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER simplified abstract
- Samsung electronics co., ltd. (20240128935). DIFFERENTIAL SIGNALING CIRCUIT FOR CORRECTING FOR DUTY CHANGE DUE TO NBTI DEGRADATION, OPERATING METHOD THEREOF, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract
- Samsung Electronics Co., Ltd. patent applications on April 18th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024