Category:H01L23/528
H01L23/528 - IPC Classification
H01L23/528 is a specific classification within the International Patent Classification (IPC) system, which is used to categorize patents and patent applications according to the different areas of technology they pertain to. This classification addresses technologies in the domain of semiconductor devices, specifically focusing on:
- Semiconductor devices; Electric solid state devices not otherwise provided for
* This category is part of a broader classification, H01L, which covers a wide range of semiconductor technologies and their manufacturing processes.
- Specific structural details of semiconductor devices
* The classification highlights specialized structural features and configurations that are unique to semiconductor devices.
- Arrangements for cooling, heating, ventilating or temperature compensation
* This subcategory focuses on the designs and methods used in managing the thermal aspects of semiconductor devices, which is critical for their efficiency and longevity.
- The subcategory 528 emphasizes on Mountings or securing means of detachable cooling or heating arrangements
* This area is particularly concerned with the techniques and mechanisms used to attach cooling or heating elements to semiconductor devices. Efficient thermal management is crucial in semiconductor devices to ensure optimal performance and to prevent overheating, which can lead to device failure.
For a more detailed exploration of the patents and innovations classified under H01L23/528, one can refer to patent databases and resources that categorize inventions based on the IPC system. The innovations in this classification are pivotal in advancing semiconductor technology, ensuring devices operate within safe temperature ranges, thereby enhancing performance and durability.
Subcategories
This category has only the following subcategory.
A
Pages in category "H01L23/528"
The following 200 pages are in this category, out of 1,457 total.
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- 17383690. SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17454203. COMB / FISHBONE METAL STACK simplified abstract (QUALCOMM Incorporated)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17524107. INTERCONNECTS FORMED USING INTEGRATED DAMASCENE AND SUBTRACTIVE ETCH PROCESSING simplified abstract (International Business Machines Corporation)
- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17531837. BURIED POWER RAIL AFTER REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 17534629. Reliability Macros for Contact Over Active Gate Layout Designs simplified abstract (International Business Machines Corporation)
- 17543964. BEOL INTERCONNECT SUBTRACTIVE ETCH SUPER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545610. STACKED FETS WITH NON-SHARED WORK FUNCTION METALS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17547700. INTEGRATED CIRCUIT DEVICES INCLUDING A METAL RESISTOR AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17547775. MIDDLE OF LINE STRUCTURE WITH STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548773. DUAL-METAL ULTRA THICK METAL (UTM) STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551309. STACKED COMPLEMENTARY TRANSISTOR STRUCTURE FOR THREE-DIMENSIONAL INTEGRATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551675. LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17576007. INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17643362. STACKED FIELD EFFECT TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17643408. ACCURATE METAL LINE AND VIA HEIGHT CONTROL FOR TOP VIA PROCESS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17667873. SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17690154. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO.,LTD.)
- 17698476. METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING POROUS DIELECTRIC LAYER AND SEMICONDUCTOR DEVICE FABRICATED THEREBY simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17702137. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17703130. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES, METHODS OF MANUFACTURING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17703668. SEAL STRUCTURES INCLUDING PASSIVATION STRUCTURES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17704177. SEMICONDUCTOR CHIPS HAVING RECESSED REGIONS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17714202. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17725300. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17731464. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17743233. MEMORY DEVICES INCLUDING TRANSISTORS ON MULTIPLE LAYERS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17748291. TRANSISTOR CAPABLE OF ELECTRICALLY CONTROLLING A THRESHOLD VOLTAGE AND SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17805221. MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
- 17806280. VIA CONNECTION TO BACKSIDE POWER DELIVERY NETWORK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806570. HIGH ASPECT RATIO BURIED POWER RAIL METALLIZATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806602. HYBRID SIGNAL AND POWER TRACK FOR STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808116. POWER PLANES AND PASS-THROUGH VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808178. DECOUPLING CAPACITOR INSIDE GATE CUT TRENCH simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808316. INTERCONNECT WITH TWO-DIMENSIONAL FREE ZERO LINE END ENCLOSURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808568. CONTACTS FOR STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17814836. FAN-OUT PACKAGE STRUCTURES WITH CASCADED OPENINGS IN ENHANCEMENT LAYER simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17819330. SEMICONDUCTOR MEMORY DEVICES, ELECTRONIC SYSTEMS INCLUDING THE SAME AND FABRICATING METHODS OF THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17819482. POWER VIAS FOR BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17819538. ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES ISOLATED BY SLOT STRUCTURES, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17822421. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17822726. MICROELECTRONIC DEVICES COMPRISING A BORON-CONTAINING MATERIAL, AND RELATED ELECTRONIC SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17823472. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17825383. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17832488. INTERCONNECT STRUCTURES IN INTEGRATED CIRCUIT CHIPS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17834940. SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17834992. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17835080. SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17835861. PACKAGE COMPRISING A SUBSTRATE WITH A BRIDGE CONFIGURED FOR A BACK SIDE POWER DISTRIBUTION NETWORK simplified abstract (QUALCOMM Incorporated)
- 17835863. INTERCONNECT VIA METAL-INSULATOR-METAL (MIM) FUSE FOR INTEGRATED CIRCUITRY simplified abstract (Intel Corporation)
- 17836142. SEMICONDUCTOR PACKAGES simplified abstract (Samsung Electronics Co., Ltd.)
- 17837434. SKIP-LEVEL TSV WITH HYBRID DIELECTRIC SCHEME FOR BACKSIDE POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17837664. GRAPHENE-CLAD METAL INTERCONNECT simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838551. SEMICONDUCTOR DEVICES HAVING IMPROVED ELECTRICAL INTERCONNECT STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17846423. ENHANCED POWER AND SIGNAL FOR STACKED-FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17848021. MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS simplified abstract (Micron Technology, Inc.)
- 17849207. MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICES IN AN INTERCONNECT STACK THEREOF simplified abstract (Intel Corporation)
- 17849345. INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CIRCUIT BLOCKS IN INTEGRATED CIRCUIT simplified abstract (Samsung Electronics Co., Ltd.)
- 17850746. SEMICONDUCTOR STRUCTURE INCLUDING BARRIER LAYER BETWEEN ELECTRODE LAYER AND UNDERLYING SUBSTRATE simplified abstract (Intel Corporation)
- 17850779. INTEGRATED CIRCUIT STRUCTURE WITH RECESSED SELF-ALIGNED DEEP BOUNDARY VIA simplified abstract (Intel Corporation)
- 17851393. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17851960. INTEGRATED CIRCUIT STRUCTURES HAVING AOI GATES WITH ROUTING ACROSS NANOWIRES simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17852812. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17862496. THREE-DIMENSIONAL INTEGRATED CIRCUIT STRUCTURE AND A METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17862987. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17865565. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17866917. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17873180. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876694. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17878825. INTEGRATED CIRCUIT CELL WITH DUAL ROW, BACK-TO-BACK, TRANSISTOR BODY TIES simplified abstract (QUALCOMM Incorporated)
- 17879049. SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17884817. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17885025. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17887533. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17888369. LAYOUT DESIGN OF CUSTOM STACK CAPACITOR TO PROCURE HIGH CAPACITANCE simplified abstract (QUALCOMM Incorporated)
- 17892252. FILM PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17893966. SEMICONDUCTOR MEMORIES INCLUDING EDGE MATS HAVING FOLDED DIGIT LINES simplified abstract (Micron Technology, Inc.)
- 17894102. SPLIT VIA STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGING simplified abstract (Micron Technology, Inc.)
- 17895286. Conductive Via With Improved Gap Filling Performance simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896241. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17896278. Barrier-Less Jumper Structure for Line-to-Line Connections simplified abstract (International Business Machines Corporation)
- 17896775. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897876. SKIP VIA WITH LOCALIZED SPACER simplified abstract (International Business Machines Corporation)
- 17899586. SEMICONDUCTOR DEVICE ASSEMBLIES WITH COPLANAR INTERCONNECT STRUCTURES, AND METHODS FOR MAKING THE SAME simplified abstract (Micron Technology, Inc.)
- 17900804. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17930656. MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17930739. GAA DEVICE WITH THE SUBSTRATE INCLUDING EMBEDDED INSULATING STRUCTURE BETWEEN BSPDN AND CHANNELS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17930801. FULL WAFER DEVICE WITH BACK SIDE PASSIVE ELECTRONIC COMPONENTS simplified abstract (Intel Corporation)
- 17930841. FULL WAFER DEVICE WITH BACK SIDE INTERCONNECTS AND WAFER-SCALE INTEGRATION simplified abstract (Intel Corporation)
- 17931145. A SINGLE BACKSIDE POWER PLANE FOR IMPROVED POWER DELIVERY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932182. Structure and Method of Fabrication for High Performance Integrated Passive Device simplified abstract (Apple Inc.)
- 17932327. POWER DELIVERY NETWORK HAVING SUPER VIAS IN AN INTEGRATED CIRCUIT simplified abstract (International Business Machines Corporation)
- 17932500. PORT LANDING-FREE LOW-SKEW SIGNAL DISTRIBUTION WITH BACKSIDE METALLIZATION AND BURIED RAIL simplified abstract (QUALCOMM Incorporated)
- 17932679. BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE simplified abstract (International Business Machines Corporation)
- 17932788. ON-CHIP HYBRID ELECTROMAGNETIC INTERFERENCE (EMI) SHIELDING WITH THERMAL MITIGATION simplified abstract (QUALCOMM Incorporated)
- 17932919. SEMICONDUCTOR BACKSIDE CONTACT STRUCTURE WITH INCREASED CONTACT AREA simplified abstract (International Business Machines Corporation)
- 17933000. INTEGRATED CIRCUIT (IC) DEVICE WITH HYBRID METAL LAYER simplified abstract (Intel Corporation)
- 17933078. NON-PLANAR METAL-INSULATOR-METAL STRUCTURE simplified abstract (International Business Machines Corporation)
- 17933187. SELF-ALIGNED BACKSIDE CONTACT MODULE FOR 3DIC APPLICATION simplified abstract (QUALCOMM Incorporated)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation)
- 17934959. SEMICONDUCTOR DEVICE HAVING WORD LINE SEPARATION LAYER simplified abstract (Samsung Electronics Co., Ltd.)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ADVANCED MICRO DEVICES, INC.)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ATI TECHNOLOGIES ULC)
- 17937431. POWER GATING DUMMY POWER TRANSISTORS FOR BACK SIDE POWER DELIVERY NETWORKS simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17938344. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17940715. ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17940911. DECOUPLING CAPACITOR ARCHITECTURE simplified abstract (QUALCOMM Incorporated)
- 17943564. Large Surface VBPR for Robust Alignment in Advanced Technology Nodes simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943799. LINE EXTENSION FOR SKIP-LEVEL VIA LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943840. TRANSISTOR DEVICES WITH INTEGRATED DIODES simplified abstract (Intel Corporation)
- 17944343. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17944437. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945418. SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17948664. FLEXIBLE WIRING ARCHITECTURE FOR MULTI-DIE INTEGRATION simplified abstract (International Business Machines Corporation)
- 17950175. SEMICONDUCTOR DEVICE WITH IMPROVED ESD PERFORMANCE, ESD RELIABILITY AND SUBSTRATE EMBEDDED POWERGRID APPROACH simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17951337. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17955803. LOCALLY WIDENED PROFILE FOR NANOSCALE WIRING STRUCTURE simplified abstract (International Business Machines Corporation)
- 17955974. Self-Aligned Wafer Backside Gate Signal with Airgap simplified abstract (International Business Machines Corporation)
- 17956114. SEMICONDUCTOR STRUCTURES WITH STACKED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 17956775. SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 17956918. BACKSIDE CONTACT WITH SHALLOW PLACEHOLDER AND EASY BACKSIDE SEMICONDUCTOR REMOVAL simplified abstract (International Business Machines Corporation)
- 17958202. SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROELECTRIC CAPACITORS simplified abstract (Intel Corporation)
- 17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation)
- 17958284. INCORPORATION OF SUPERLATTICE SEMI-METALS FOR SCALED INTERCONNECTS simplified abstract (Intel Corporation)
- 17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation)
- 17962577. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17963281. SKIP VIA WITH LATERAL LINE CONNECTION simplified abstract (International Business Machines Corporation)
- 17964583. REVERSE EMBEDDED POWER STRUCTURE FOR GRAPHICAL PROCESSING UNIT CHIPS AND SYSTEM-ON-CHIP DEVICE PACKAGES simplified abstract (NVIDIA Corporation)
- 17968058. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17969773. SELF-ALIGNED ZERO TRACK SKIP simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17971443. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17972892. Hybrid Power Rail Formation in Dielectric Isolation for Semiconductor Device simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17983520. SEMICONDUCTOR DEVICE INCLUDING STACK STRUCTURE AND TRENCHES simplified abstract (Samsung Electronics Co., Ltd.)
- 17986276. BACKSIDE SKIP-LEVEL THROUGH VIA FOR BACKSIDE SIGNAL LINE CONNECTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17989061. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18047270. NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18048186. SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS simplified abstract (Samsung Electronics Co., Ltd.)
- 18048858. DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049301. VIRTUAL POWER SUPPLY THROUGH WAFER BACKSIDE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18051034. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18052412. MEMORY CELL ARRAY INCLUDING PARTITIONED DUAL LINE STRUCTURE AND DESIGN METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18054187. METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054349. BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054637. SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract (Micron Technology, Inc.)
- 18054991. AIRGAP SPACER FOR POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18059398. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THEREOF simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18060003. LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060056. LATE MIDDLE-OF-LINE GATE CUT WITH POWER BAR FORMATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060168. ISOLATED SUPER VIA TO MIDDLE METAL LINE LEVEL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18060544. BURIED OXIDE LAYER AND ETCH STOP LAYER PROCESS FOR DIRECT BACK SIDE CONTACT OF SEMICONDUCTOR DEVICE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062624. POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (International Business Machines Corporation)
- 18064352. INTEGRATED CIRCUIT (IC) DEVICE WITH MULTI-PITCH PATTERN FABRICATED THROUGH CROSS-LINKABLE BLOCK COPOLYMER simplified abstract (Intel Corporation)
- 18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 18065120. SUPER VIA WITH SIDEWALL SPACER simplified abstract (International Business Machines Corporation)
- 18065965. SELF-ALIGNED BACKSIDE GATE CONTACTS simplified abstract (International Business Machines Corporation)
- 18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation)
- 18066620. ENLARGED SHALLOW TRENCH ISOLATION FOR BACKSIDE POWER simplified abstract (International Business Machines Corporation)
- 18067127. LOW-RESISTANCE VIA TO BACKSIDE POWER RAIL simplified abstract (International Business Machines Corporation)
- 18067148. HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (International Business Machines Corporation)
- 18067207. HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS simplified abstract (International Business Machines Corporation)
- 18067557. DEVICE HAVING AN IN-SUBSTRATE INDUCTOR AND METHOD FOR MAKING THE INDUCTOR simplified abstract (QUALCOMM Incorporated)
- 18068123. SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract (International Business Machines Corporation)
- 18068570. GATE TIE-DOWN FOR TOP FIELD EFFECT TRANSISTOR simplified abstract (International Business Machines Corporation)
- 18069213. DECOUPLING CAPACITOR INSIDE BACKSIDE POWER DISTRIBUTION NETWORK POWERVIA TRENCH simplified abstract (International Business Machines Corporation)
- 18069970. EXTENDED SOURCE/DRAIN CONTACT FOR SHIFTED DRAIN VOLTAGE FOR A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (International Business Machines Corporation)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18078454. SEMICONDUCTOR STRUCTURE WITH BACKSIDE METALLIZATION LAYERS simplified abstract (International Business Machines Corporation)
- 18080029. BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER simplified abstract (International Business Machines Corporation)
- 18083385. DIELECTRIC SEPARATION FOR BACKSIDE POWER RAIL LINES simplified abstract (International Business Machines Corporation)
- 18087384. HETEROGENEOUS INTEGRATION STRUCTURE WITH VOLTAGE REGULATION simplified abstract (International Business Machines Corporation)
- 18088545. GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS simplified abstract (Intel Corporation)
- 18088552. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract (Intel Corporation)
- 18089483. TSV-TYPE EMBEDDED MULTI-DIE INTERCONNECT BRIDGE ENABLING WITH THERMAL COMPRESSION NON-CONDUCTIVE FILM (TC-NCF) PROCESS simplified abstract (Intel Corporation)
- 18089838. MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Yangtze Memory Technologies Co., Ltd.)
- 18089877. INTEGRATED CIRCUIT STRUCTURES HAVING LOOKUP TABLE DECODERS FOR FPGAS simplified abstract (Intel Corporation)
- 18089886. INTEGRATED CIRCUIT STRUCTURES HAVING TWO-TRANSISTOR GAIN CELL simplified abstract (Intel Corporation)
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