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Category:C30B29/36
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Pages in category "C30B29/36"
The following 12 pages are in this category, out of 12 total.
1
- 18367753. SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)
- 18468030. SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)
- 18468030. SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
- 18523840. SiC EPITAXIAL WAFER simplified abstract (RESONAC CORPORATION)
- 18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (DENSO CORPORATION)
- 18588308. SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)